Author, as appears in the article.: J. J. Carvajal; F. Díaz; M. Aguiló; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer

Department: Química Física i Inorgànica

URV's Author/s: CARVAJAL MARTÍ, JOAN JOSEP; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA; J. Mena; O. V. Bilousov; O. Martínez; J. Jiménez; V.Z. Zubialevich; P.J. Parbrook; H. Geaney; C.O¿Dwyer

Keywords: GaN based LED Semiconductor devices Chemical vapor depositions (CVD)

Abstract: Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in th epast. However, these fabrication techniques require further postgrowth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.

Research group: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials

Thematic Areas: Chemistry Química Química

licence for use: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 1938-5862

Author identifier: 0000-0002-4389-7298; 0000-0003-4581-4967; 0000-0001-6130-9579; 2; 3; 4; 5; 6; 7; 8; 9

Record's date: 2017-05-31

Last page: 176

Journal volume: 66

Papper version: info:eu-repo/semantics/acceptedVersion

Link to the original source: https://iopscience.iop.org/article/10.1149/06601.0163ecst

Funding program: altres; JCYL (VA293U13) altres; Grupos consolidados; 2014SGR1358 plan; RETOS; MAT2013-47395-C4-4-R plan; Excelencia; MAT2011-29255-C02-02

Article's DOI: 10.1149/06601.0163ecst

Entity: Universitat Rovira i Virgili

Journal publication year: 2015

First page: 163

Publication Type: Article Artículo Article