Articles producció científica> Química Física i Inorgànica

Sb2Te3thin film for the passive Q-switching of a Tm:GdVO4laser

  • Identification data

    Identifier: imarina:3934048
    Handle: http://hdl.handle.net/20.500.11797/imarina3934048
  • Authors:

    Loiko P
    Bogus?awski J
    Serres J
    Kifle E
    Kowalczyk M
    Mateos X
    Sotor J
    Zyba?a R
    Mars K
    Miku?a A
    Kaszyca K
    Aguiló M
    Díaz F
    Griebner U
    Petrov V
  • Others:

    Author, as appears in the article.: Loiko P; Bogus?awski J; Serres J; Kifle E; Kowalczyk M; Mateos X; Sotor J; Zyba?a R; Mars K; Miku?a A; Kaszyca K; Aguiló M; Díaz F; Griebner U; Petrov V
    Department: Química Física i Inorgànica
    URV's Author/s: , / Aguiló Díaz, Magdalena / Mateos Ferré, Xavier / Serres Serres, Josep Maria
    Keywords: @infoAeu @residentesaeu @uroweb Etiqueta «#» Hashtag
    Abstract: © 2018 Optical Society of America. We report on the first application of an antimony telluride (Sb2Te3) thin film as a saturable absorber (SA) in a microchip laser. The 3-15 nm-thick Sb2Te3films were deposited on glass substrates by pulsed magnetron sputtering and they were studied by SEM, X-ray diffraction, Raman and optical spectroscopy. The saturable absorption of the Sb2Te3film was confirmed at 1.56 μm for ns-long pulses revealing low saturation intensity of 0.17 MW/cm2. The microchip laser was based on a Tm:GdVO4crystal diode-pumped at ~802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The highest pulse energy of 3.5 μJ and the shortest pulse duration of 223 ns were obtained at the 200 kHz repetition rate.
    Thematic Areas: Química Optics Materials science, multidisciplinary Materiais Interdisciplinar Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Biotecnología Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 21593930
    Author's mail: josepmaria.serres@urv.cat f.diaz@urv.cat xavier.mateos@urv.cat magdalena.aguilo@urv.cat
    Author identifier: 0000-0002-4299-538X 0000-0003-4581-4967 0000-0003-1940-1990 0000-0001-6130-9579
    Last page: 1732
    Record's date: 2023-10-14
    Journal volume: 8
    Papper version: info:eu-repo/semantics/publishedVersion
    Link to the original source: https://www.osapublishing.org/ome/abstract.cfm?uri=ome-8-7-1723
    Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Optical Materials Express. 8 (7): 1723-1732
    APA: Loiko P; Bogus?awski J; Serres J; Kifle E; Kowalczyk M; Mateos X; Sotor J; Zyba?a R; Mars K; Miku?a A; Kaszyca K; Aguiló M; Díaz F; Griebner U; Petrov (2018). Sb2Te3thin film for the passive Q-switching of a Tm:GdVO4laser. Optical Materials Express, 8(7), 1723-1732. DOI: 10.1364/OME.8.001723
    Article's DOI: 10.1364/OME.8.001723
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2018
    First page: 1723
    Publication Type: Journal Publications
  • Keywords:

    Electronic, Optical and Magnetic Materials,Materials Science, Multidisciplinary,Optics
    Química
    Optics
    Materials science, multidisciplinary
    Materiais
    Interdisciplinar
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Electronic, optical and magnetic materials
    Biotecnología
    Astronomia / física
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