Author, as appears in the article.: Assili, Kawther; Gonzalez, Oriol; Alouani, Khaled; Vilanova, Xavier

Department: Enginyeria Electrònica, Elèctrica i Automàtica

URV's Author/s: Vilanova Salas, Javier

Keywords: Xrd Triphenylphosphine selenide Tin selenide Thermoelectric performance Thermal-properties Substrate-temperature Snse thin film Single-source precursors Sensing properties Power-factor Physical-properties Optical properties Indium selenide Electrical-properties Cvd Chemical-vapor-deposition

Abstract: In this work, orthorhombic tin selenide thin films were grown onto three different substrates using an organophosphorus precursor (Ph3PSe) via chemical vapor deposition. Structural, microstructural and morphological properties of the as-grown films were systematically investigated using XRD, ESEM and AFM respectively. Grain size, microstrain and dislocation were calculated and correlated with different factors. The effects of selenization temperature and substrate type on different film properties and gas sensing response of films deposited onto alumina substrates were investigated. XRD analysis reveals the appearance of a mixed phase as a function of temperature. Furthermore, substrate type plays a key role in the rate of appearance of each phase. EDAX analysis confirms the existence of the desired elements and detect the evaporation of selenium and the appearance of oxygen at higher temperatures. Atomic force microscopy (AFM) was used to investigate the surface topography of the grown thin films. Optical properties of the films grown onto glass and silicon substrates were studied. From the recorded optical data, a direct optical band gap in the range of 0.9-1.3 eV was obtained with an absorption coefficient α >104 cm-1 throughout large spectral regions. Optical studies were remarkably affected by the obtained phase as well as the selenization temperature. Gas sensing properties of the samples deposited onto alumina substrates were examined as a new sensing material for detection of methane gas at different concentrations. SnSe sensors show high sensitivity, are reversible and exhibit fast response and recovery times compared to SnSe2 sensors.

Thematic Areas: Química Odontología Medicina ii Medicina i Materiais General chemistry General chemical engineering Farmacia Ciências biológicas ii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência de alimentos Chemistry, multidisciplinary Chemistry (miscellaneous) Chemistry (all) Chemical engineering (miscellaneous) Chemical engineering (all) Biotecnología Biodiversidade Astronomia / física

licence for use: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 1878-5352

Author's mail: xavier.vilanova@urv.cat

Author identifier: 0000-0002-6245-7933

Record's date: 2023-02-18

Papper version: info:eu-repo/semantics/publishedVersion

Link to the original source: https://www.sciencedirect.com/science/article/pii/S1878535217301909?via%3Dihub

Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/

Papper original source: Arabian Journal Of Chemistry. 13 (1): 1229-1246

APA: Assili, Kawther; Gonzalez, Oriol; Alouani, Khaled; Vilanova, Xavier (2020). Structural, morphological, optical and sensing properties of SnSe and SnSe2 thin films as a gas sensing material. Arabian Journal Of Chemistry, 13(1), 1229-1246. DOI: 10.1016/j.arabjc.2017.10.004

Article's DOI: 10.1016/j.arabjc.2017.10.004

Entity: Universitat Rovira i Virgili

Journal publication year: 2020

Publication Type: Journal Publications