Repositori institucional URV
| URV's Author/s: | Iñiguez Nicolau, Benjamin |
| Author, as appears in the article.: | Abdelmoneam A; Iñiguez B; Fedawy M |
| Author's mail: | benjamin.iniguez@urv.cat |
| Author identifier: | 0000-0002-6504-7980 |
| Journal publication year: | 2018 |
| Publication Type: | Proceedings Paper |
| APA: | Abdelmoneam A; Iñiguez B; Fedawy M (2018). Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET. |
| Papper original source: | Proceedings Of The 2018 12th Spanish Conference On Electron Devices, Cde 2018. |
| Abstract: | © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data. |
| Article's DOI: | 10.1109/CDE.2018.8597131 |
| Link to the original source: | https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2018.5075 |
| Papper version: | info:eu-repo/semantics/publishedVersion |
| licence for use: | https://creativecommons.org/licenses/by/3.0/es/ |
| Department: | Enginyeria Electrònica, Elèctrica i Automàtica |
| Licence document URL: | https://repositori.urv.cat/ca/proteccio-de-dades/ |
| Keywords: | Nanowire mosfets Iii-v semiconductor Compact modeling |
| Entity: | Universitat Rovira i Virgili |
| Record's date: | 2023-02-18 |
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