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TITLE:
Large-Signal DG-MOSFET Modelling for RFID Rectification - imarina:9282625

URV's Author/s:Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Author, as appears in the article.:Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
Author's mail:antonioramon.lazaro@urv.cat
benjamin.iniguez@urv.cat
Author identifier:0000-0003-3160-5777
0000-0002-6504-7980
Journal publication year:2016
Publication Type:Journal Publications
APA:Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), -. DOI: 10.1155/2016/8017139
Papper original source:Advances In Condensed Matter Physics. 2016
Abstract:This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
Article's DOI:10.1155/2016/8017139
Link to the original source:https://www.hindawi.com/journals/acmp/2016/8017139/
Papper version:info:eu-repo/semantics/publishedVersion
licence for use:https://creativecommons.org/licenses/by/3.0/es/
Department:Enginyeria Electrònica, Elèctrica i Automàtica
Licence document URL:https://repositori.urv.cat/ca/proteccio-de-dades/
Thematic Areas:Química
Physics, condensed matter
Materiais
Engenharias ii
Condensed matter physics
Astronomia / física
Entity:Universitat Rovira i Virgili
Record's date:2024-07-27
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