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Instability analysis of perovskite solar cells via short-circuit impedance spectroscopy: A case study on NiOx passivation - imarina:9380965

Autor/s de la URV:Almora Rodríguez, Osbel / Marsal Garví, Luis Francisco
Autor segons l'article:Almora, Osbel; Lopez-Varo, Pilar; Escalante, Renan; Mohanraj, John; Marsal, Lluis F; Olthof, Selina; Anta, Juan A
Adreça de correu electrònic de l'autor:osbel.almora@urv.cat
lluis.marsal@urv.cat
Identificador de l'autor:0000-0002-2523-0203
0000-0002-5976-1408
Any de publicació de la revista:2024
Tipus de publicació:Journal Publications
Referència de l'ítem segons les normes APA:Almora, Osbel; Lopez-Varo, Pilar; Escalante, Renan; Mohanraj, John; Marsal, Lluis F; Olthof, Selina; Anta, Juan A (2024). Instability analysis of perovskite solar cells via short-circuit impedance spectroscopy: A case study on NiOx passivation. Journal Of Applied Physics, 136(9), 094502-. DOI: 10.1063/5.0216983
Referència a l'article segons font original:Journal Of Applied Physics. 136 (9): 094502-
Resum:Perovskite solar cells (PSCs) continue to be the "front runner" technology among emerging photovoltaic devices in terms of power conversion efficiency and versatility of applications. However, improving stability and understanding their relationship with their ionic-electronic transport mechanisms continue to be challenging. In this work, a case study of NiOx-based inverted PSCs and the effect of different interface passivating treatments on device performance is presented. Impedance spectroscopy (IS) measurements in short-circuit conditions were performed under different illumination intensities, as well as bias-stress operational stability tests under constant illumination intensity. Surface treatments that involved bulky Lewis bases resulted in better and more stable performance. In contrast, acidic anion donors could induce both an initial performance decrease with a characteristic three-arcs impedance Nyquist plot and a subsequent instability during light exposure. Drift-diffusion simulations suggest strong modifications of surface recombination at the interface with the hole transport material, and for the ion concentration and mobilities in the perovskite. Importantly, capacitance and resistance are shown to peak maximum and minimum values, respectively, around mobile ion concentration (N-ion) of 10(16) and 10(17) cm(-3). These features relate to the transition from a drift-, for low N-ion below a threshold value, to a diffusion-dominated transport in the bulk of the perovskite, for high N-ion beyond the threshold value. Our results introduce a general route for characterization of instability paths in PSCs via IS performed under short-circuit conditions.
DOI de l'article:10.1063/5.0216983
Enllaç font original:https://pubs.aip.org/aip/jap/article/136/9/094502/3311153/Instability-analysis-of-perovskite-solar-cells-via
Versió de l'article dipositat:info:eu-repo/semantics/publishedVersion
Accès a la llicència d'ús:https://creativecommons.org/licenses/by/3.0/es/
Departament:Enginyeria Electrònica, Elèctrica i Automàtica
URL Document de llicència:https://repositori.urv.cat/ca/proteccio-de-dades/
Àrees temàtiques:Química
Physics, applied
Physics and astronomy (miscellaneous)
Physics and astronomy (all)
Odontología
Medicina iii
Medicina ii
Medicina i
Materiais
Matemática / probabilidade e estatística
Interdisciplinar
Geociências
General physics and astronomy
Farmacia
Ensino
Engenharias iv
Engenharias iii
Engenharias ii
Engenharias i
Condensed matter physics
Ciências biológicas iii
Ciências biológicas i
Ciências ambientais
Ciências agrárias i
Ciência da computação
Biotecnología
Biodiversidade
Atomic and molecular physics, and optics
Astronomia / física
Antropologia / arqueologia
Paraules clau:Stability
Silico
Recombination
Efficiency
Degradation
Charge collection
Entitat:Universitat Rovira i Virgili
Data d'alta del registre:2024-09-28
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