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Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs - imarina:9241949

Autor/es de la URV:Lázaro Guillén, Antonio Ramon
Autor según el artículo:Gonzalez, Benito; Cabrera, Jose M.; Lazaro, Antonio;
Direcció de correo del autor:antonioramon.lazaro@urv.cat
Identificador del autor:0000-0003-3160-5777
Año de publicación de la revista:2022
Tipo de publicación:Journal Publications
Referencia de l'ítem segons les normes APA:Gonzalez, Benito; Cabrera, Jose M.; Lazaro, Antonio; (2022). Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs. Ieee Transactions On Electron Devices, 69(2), 469-474. DOI: 10.1109/ted.2021.3132854
Referencia al articulo segun fuente origial:Ieee Transactions On Electron Devices. 69 (2): 469-474
Resumen:Thermal impedance is required to describe static and fast dynamic thermal behavior in silicon-on-insulator (SOI) devices. This study presents an empirical physical model, which accounts for gate length, for calculating the thermal impedance of multi-finger partially depleted (PD) SOI MOSFETs at room temperature. For the first time, the parameters of the model are obtained from measurements of ac conductance and the characteristic thermal frequency determination. The model shows decreasing thermal resistance and linearly augmented thermal capacitance with increasing gate length from 0.18 to 2.50 mu m. Thus, thermal time constants of similar to 760 ns, extracted from a variety of gate lengths, are correctly predicted.
DOI del artículo:10.1109/ted.2021.3132854
Enlace a la fuente original:https://ieeexplore.ieee.org/document/9648224
Versión del articulo depositado:info:eu-repo/semantics/acceptedVersion
Acceso a la licencia de uso:https://creativecommons.org/licenses/by/3.0/es/
Departamento:Enginyeria Electrònica, Elèctrica i Automàtica
URL Documento de licencia:https://repositori.urv.cat/ca/proteccio-de-dades/
Áreas temáticas:Physics, applied
Materiais
Interdisciplinar
Engineering, electrical & electronic
Engenharias iv
Engenharias ii
Electronic, optical and magnetic materials
Electrical and electronic engineering
Ciência da computação
Astronomia / física
Palabras clave:Thermal resistance
Thermal impedance.
Thermal impedance
Thermal conductivity
Temperature measurement
Silicon-on-insulator mosfets
Silicon-on-insulator (soi) mosfet
Silicon on insulator technology
Semiconductor device models
Semiconductor device modeling
Resistance
Partially depleted silicon-on-insulator
Mosfets
Mosfet devices
Mosfet
Mos-fet
Model
Logic gates
Impedance characterization
Impedance
Heat resistance
Gate-length
Extraction
Electrothermal characterization model
Electrothermal characterization
Capacitance
Entidad:Universitat Rovira i Virgili
Fecha de alta del registro:2024-09-07
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