Articles producció científica> Química Física i Inorgànica

Prospects of monoclinic Yb:KLu(WO4)2 crystal for multi-watt microchip lasers

  • Dades identificatives

    Identificador: PC:1160
    Handle: https://hdl.handle.net/20.500.11797/PC1160
    Autors:
    Francesc DíazMagdalena AguilóUwe GriebnerValentin PetrovNikolai KuleshovKonstantin YumashevPavel LoikoJosep Maria SerresXavier Mateos
    Resum:
    Abstract: The concept of Yb-doped double tungstate microchip lasers is verified and scaled to the multi-watt power level. The active element is a 2.6 mm-thick Yb:KLuW crystal cut along the Ng optical indicatrix axis. Maximum continuous-wave output power of 4.4 W is extracted at 1049 nm with a slope efficiency of 65% and an optical-to-optical efficiency of 44% with respect to the absorbed pump power. The laser emission is linearly polarized and the intensity profile is characterized by a near-circular TEM00 mode with M2 x,y < 1.1. Due to low intracavity losses of the microchip laser, laser operation at wavelengths as long as 1063 nm is achieved. The mechanism of the thermal mode stabilization in the microchip cavity is confirmed. At very low resonator losses polarization-switching between E || Nm and Np oscillating states is observed and explained on the basis of spectroscopic and thermal lens characteristics.

  • Altres:

    Autor segons l'article: Francesc Díaz Magdalena Aguiló Uwe Griebner Valentin Petrov Nikolai Kuleshov Konstantin Yumashev Pavel Loiko Josep Maria Serres Xavier Mateos
    Departament: Química Física i Inorgànica
    Autor/s de la URV: DÍAZ GONZÁLEZ, FRANCISCO MANUEL AGUILÓ DÍAZ, MAGDALENA Uwe Griebner Valentin Petrov Nikolai Kuleshov Konstantin Yumashev Pavel Loiko Josep Maria Serres MATEOS FERRÉ, XAVIER
    Paraules clau: double tungstate lasers
    Resum: Abstract: The concept of Yb-doped double tungstate microchip lasers is verified and scaled to the multi-watt power level. The active element is a 2.6 mm-thick Yb:KLuW crystal cut along the Ng optical indicatrix axis. Maximum continuous-wave output power of 4.4 W is extracted at 1049 nm with a slope efficiency of 65% and an optical-to-optical efficiency of 44% with respect to the absorbed pump power. The laser emission is linearly polarized and the intensity profile is characterized by a near-circular TEM00 mode with M2 x,y < 1.1. Due to low intracavity losses of the microchip laser, laser operation at wavelengths as long as 1063 nm is achieved. The mechanism of the thermal mode stabilization in the microchip cavity is confirmed. At very low resonator losses polarization-switching between E || Nm and Np oscillating states is observed and explained on the basis of spectroscopic and thermal lens characteristics.
    Grup de recerca: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
    Àrees temàtiques: Chemistry Química Química
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 2159-3930
    Identificador de l'autor: 0000-0003-4581-4967 0000-0001-6130-9579 n/a n/a n/a n/a 0000-0002-4270-0668 0000-0002-4299-538X 0000-0003-1940-1990
    Data d'alta del registre: 2015-04-17
    Pàgina final: 667
    Volum de revista: 5
    Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2015
    Pàgina inicial: 661
    Tipus de publicació: Article Artículo Article

  • Paraules clau:

    Tungstè
    Làsers de semiconductors
    double tungstate lasers
    Chemistry
    Química
    Química
    2159-3930

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