Autor segons l'article: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Tunneling current. Tunneling Transistors Thermionic emission Silicon-nanowire transistors Schottky barriers Schottky barrier Sbfet Rfet Mathematical models Logic gates Junctions Field emission Electric potential Compact modeling Closed-form tunneling current tunneling transistors thermionic emission schottky barriers schottky barrier sbfet rfet mathematical models junctions field emission electric potential compact modeling closed-form
Resum: A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
Àrees temàtiques: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2024-09-07
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society. 10 416-423
Referència de l'ítem segons les normes APA: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. Ieee Journal Of The Electron Devices Society, 10(), 416-423. DOI: 10.1109/JEDS.2021.3136981
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2022
Tipus de publicació: Journal Publications
Repositori URV