Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Device Physics, Modeling and Simulation of Organic Electrochemical Transistors

  • Dades identificatives

    Identificador: imarina:9296465
    Handle: https://hdl.handle.net/20.500.11797/imarina9296465
    Autors:
    Koch MTseng HWeissbach AIniguez BLeo KKloes AKleemann HDarbandy G
    Resum:
    In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltzmann statistics is introduced to reproduce associated charge densities, electrostatics and switching properties of OECTs. We shed light on the working principle of OECTs by taking into account the ionic charge distribution in the electrolyte and incomplete ionization of the organic semiconductor describing the underlying electrochemical redox reaction. This enables analyzing the OECTs electrical performance as well as a simplified chemical properties via an electrical double layer, doping and de-doping of the OMIEC layer. We have fabricated, characterized, simulated and analyzed OECTs based on PEDOT:PSS, and we show that the proposed model reveals important properties of the device’s working mechanism. The model shows a good agreement with the experimental data of the fabricated devices.

  • Altres:

    Autor segons l'article: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Paraules clau: Synaptic devices Simulation Semiconductor process modeling Semiconductor device measurement Oects Modeling Mathematical models Logic gates Ionization Electrolytes Electrical double layer Capacitance
    Resum: In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltzmann statistics is introduced to reproduce associated charge densities, electrostatics and switching properties of OECTs. We shed light on the working principle of OECTs by taking into account the ionic charge distribution in the electrolyte and incomplete ionization of the organic semiconductor describing the underlying electrochemical redox reaction. This enables analyzing the OECTs electrical performance as well as a simplified chemical properties via an electrical double layer, doping and de-doping of the OMIEC layer. We have fabricated, characterized, simulated and analyzed OECTs based on PEDOT:PSS, and we show that the proposed model reveals important properties of the device’s working mechanism. The model shows a good agreement with the experimental data of the fabricated devices.
    Àrees temàtiques: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2024-09-07
    Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
    Enllaç font original: https://ieeexplore.ieee.org/document/10087327
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society.
    Referència de l'ítem segons les normes APA: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G (2023). Device Physics, Modeling and Simulation of Organic Electrochemical Transistors. Ieee Journal Of The Electron Devices Society, (), -. DOI: 10.1109/JEDS.2023.3263278
    DOI de l'article: 10.1109/JEDS.2023.3263278
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2023
    Tipus de publicació: Journal Publications

  • Paraules clau:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Synaptic devices
    Simulation
    Semiconductor process modeling
    Semiconductor device measurement
    Oects
    Modeling
    Mathematical models
    Logic gates
    Ionization
    Electrolytes
    Electrical double layer
    Capacitance
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

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