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THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors

  • Dades identificatives

    Identificador: imarina:9325772
    Handle: https://hdl.handle.net/20.500.11797/imarina9325772
    Autors:
    Kloes ALeise JPruefer JNikolaou AIniguez BGneiting TKlauk HDarbandy G
    Resum:
    This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms.

  • Altres:

    Autor segons l'article: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Paraules clau: Variability Transistors Thin-film transistor Short channel Semiconductor device modeling Organic thin film transistors Organic semiconductor Noise Mathematical models Logic gates Integrated circuit modeling Device modeling Compact model Capacitance Adaptation models
    Resum: This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms.
    Àrees temàtiques: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2024-09-07
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Enllaç font original: https://ieeexplore.ieee.org/document/10179906
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referència a l'article segons font original: Ieee Journal Of The Electron Devices Society.
    Referència de l'ítem segons les normes APA: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G (2023). THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors. Ieee Journal Of The Electron Devices Society, (), -. DOI: 10.1109/JEDS.2023.3294598
    DOI de l'article: 10.1109/JEDS.2023.3294598
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2023
    Tipus de publicació: Journal Publications

  • Paraules clau:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Variability
    Transistors
    Thin-film transistor
    Short channel
    Semiconductor device modeling
    Organic thin film transistors
    Organic semiconductor
    Noise
    Mathematical models
    Logic gates
    Integrated circuit modeling
    Device modeling
    Compact model
    Capacitance
    Adaptation models
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

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