Modelling of graphene Q-switched Tm lasers

Identifier:  PC:2471

Handle: https://hdl.handle.net/20.500.11797/PC2471

Authors:  X. Mateos; A.S. Yasukevich; P. Loiko; N.V. Gusakova; J.M. Serres; K.V. Yumashev; N.V. Kuleshov; V. Petrov; U. Griebner; M. Aguiló; F. Díaz

Abstract:
We report on a model of diode-pumped Thulium lasers passively Q-switched by a graphene saturable absorber applicable also for any other ¿fast¿ saturable absorber. It reasonably predicts the dependence of the pulse duration, pulse energy and pulse repetition frequency on the absorbed power. The model is applied in the present work for a Tm: KLuW microchip laser passively Q-switched with a multi-layer graphene saturable absorber. The laser generates ~1 W at 1926 nm with a slope efficiency of 39%. Stable 190 ns /4.1 ¿J pulses are achieved at a pulse repetition frequency of 260 kHz. The potential of graphene for the generation of few-ns pulses at ~2 µm is discussed.