Articles producció científica> Química Física i Inorgànica

Optical and Structural Characterization of Epitaxial Nanoporous GaN Grown by CVD

  • Identification data

    Identifier: PC:3249
    Handle: https://hdl.handle.net/20.500.11797/PC3249
    Authors:
    Carvajal, J. J.Mena, J.Martínez, O.Jiménez, J.Zubialevich, V. Z.Parbrook, P. J.Díaz, F.Aguiló, M.
    Abstract:
    In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

  • Others:

    Author, as appears in the article.: Carvajal, J. J. ; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; Díaz, F.; Aguiló, M.
    Department: Química Física i Inorgànica
    URV's Author/s: CARVAJAL MARTÍ, JOAN JOSEP; Mena, J. ; Martínez, O. ; Jiménez, J. ; Zubialevich, V. Z. ; Parbrook, P. J. ; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA
    Keywords: structural stress porous materials GaN
    Abstract: In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 ¿m. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.
    Research group: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
    Thematic Areas: Chemistry Química Química
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 0957-4484
    Author identifier: 0000-0002-4389-7298; ; ; ; ; ; 0000-0003-4581-4967; 0000-0001-6130-9579
    Record's date: 2018-05-30
    Journal volume: 28
    Papper version: info:eu-repo/semantics/submittedVersion
    Link to the original source: https://iopscience.iop.org/article/10.1088/1361-6528/aa7e9d
    Funding program: altres; VA081U16 altres; VA293U13 plan; ENE2014-56069-C4-4-R plan; CICYT MAT2010- 20441-C02 altres; ICREA Academia; 2010ICREA-02 plan; Retos; MAT2016-75716-C2-1-R (AEI/FEDER, UE) plan; Retos; TEC2014-55948-R
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Article's DOI: 10.1088/1361-6528/aa7e9d
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2017
    First page: 375701
    Publication Type: Article Artículo Article

  • Keywords:

    Nitrur de gal·li
    Materials porosos
    structural stress
    porous materials
    GaN
    Chemistry
    Química
    Química
    0957-4484

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