Articles producció científica> Química Física i Inorgànica

Rectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor deposition.

  • Identification data

    Identifier: PC:3253
    Authors:
    Carvajal, J. J.Mena, J.Aixart, J.O'Dwyer, C.Díaz, F.Aguió, M.
    Abstract:
    Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1¿±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ¿13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.
  • Others:

    Author, as appears in the article.: Carvajal, J. J. ; Mena, J. ; Aixart, J. ; O'Dwyer, C. ; Díaz, F.; Aguió, M.
    Department: Química Física i Inorgànica
    URV's Author/s: CARVAJAL MARTÍ, JOAN JOSEP; Mena, J. ; Aixart, J. ; O'Dwyer, C. ; DÍAZ GONZÁLEZ, FRANCISCO MANUEL; AGUILÓ DÍAZ, MAGDALENA
    Keywords: MOS Diodes LED GaN
    Abstract: Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and without involving post-growth steps to induce porosity. p-n junction rectifiers exhibited stable rectification in the range ±1¿±5 V, with very stable values of current with time. MOS diodes were fabricated in a single growth step formed by a MgO dielectric interlayer in between Mg-doped porous GaN and a Mg-Ga metallic alloy. Despite the high resistivity observed in the LEDs fabricated, that induced a turn on voltage of ¿13 V, the emission consisted only in one peak centered at 542 nm. Our porous GaN films exhibit random porosity when compared to arrays of nanostructures, however, their easy deposition over large areas without dominating leakage currents is promising for wideband gap applications.
    Research group: Física i Cristal.lografia de Materials Física i Cristal·lografia de Nanomaterials
    Thematic Areas: Química Química Chemistry
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 2162-8769
    Author identifier: 0000-0002-4389-7298; ; ; ; 0000-0003-4581-4967; 0000-0001-6130-9579
    Record's date: 2018-06-04
    Last page: 148
    Journal volume: 6
    Papper version: info:eu-repo/semantics/submittedVersion
    Link to the original source: https://iopscience.iop.org/article/10.1149/2.0041710jss
    Funding program: plan; Retos; TEC2014-55948-R plan; Retos; Mineco/AEI/FEDER MAT2016-75716-C2-1-R altres; Grupos consolidados; 2014SGR1358 altres; Icrea Academia; 2010ICREA-02 altres; Science Foundation Ireland research grant from SFI; 15/TIDA/2893 altres; Science Foundation Ireland research grant from SFI; 14/IA/2581.
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Article's DOI: 10.1149/2.0041710jss
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2017
    First page: 143
    Publication Type: Article Artículo Article
  • Keywords:

    Díodes electroluminescents
    Nitrur de gal·li
    MOS Diodes
    LED
    GaN
    Química
    Química
    Chemistry
    2162-8769
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