Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

  • Identification data

    Identifier: PC:552
    Handle: https://hdl.handle.net/20.500.11797/PC552
    Authors:
    Smaani, B.Latreche, S.Iñiguez, B.
    Abstract:
    10.1063/1.4844395

  • Others:

    Author, as appears in the article.: Smaani, B. Latreche, S. Iñiguez, B.
    Papper version: info:eu-repo/semantics/publishedVersion
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    e-ISSN: 1089-7550
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Abstract: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.
    Entity: Universitat Rovira i Virgili.
    Journal publication year: 2013
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 0021-8979
    Journal volume: 114