Author, as appears in the article.: Smaani, B. Latreche, S. Iñiguez, B.
Papper version: info:eu-repo/semantics/publishedVersion
Link to the original source: http://scitation.aip.org/content/aip/journal/jap/114/22/10.1063/1.4844395
Department: Enginyeria Electrònica, Elèctrica i Automàtica
e-ISSN: 1089-7550
Article's DOI: 10.1063/1.4844395
Abstract: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.
Entity: Universitat Rovira i Virgili.
Journal publication year: 2013
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 0021-8979
Journal volume: 114
Repositori URV