Author, as appears in the article.: Abdelmoneam A; Iñiguez B; Fedawy M
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin
Keywords: Nanowire mosfets Iii-v semiconductor Compact modeling
Abstract: © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2023-02-18
Papper version: info:eu-repo/semantics/publishedVersion
Link to the original source: https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2018.5075
Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Proceedings Of The 2018 12th Spanish Conference On Electron Devices, Cde 2018.
APA: Abdelmoneam A; Iñiguez B; Fedawy M (2018). Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET.
Article's DOI: 10.1109/CDE.2018.8597131
Entity: Universitat Rovira i Virgili
Journal publication year: 2018
Publication Type: Proceedings Paper
Repositori URV