Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET

  • Identification data

    Identifier: imarina:5873955
    Authors:
    Abdelmoneam AIñiguez BFedawy M
    Abstract:
    © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
  • Others:

    Author, as appears in the article.: Abdelmoneam A; Iñiguez B; Fedawy M
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Nanowire mosfets Iii-v semiconductor Compact modeling
    Abstract: © 2018 IEEE. In this paper, a compact equation for calculating energy sub-bands inside III-V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor-oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. We use an approximation for Bessel functions with the introduction of one fitting parameter. Additionally, a compact equation is developed for the potential due to charge associated with the first sub-band inside the semiconductor. The results show very good agreement with self-consistent Schrodinger-Poisson solver data.
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2023-02-18
    Papper version: info:eu-repo/semantics/publishedVersion
    Link to the original source: https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2018.5075
    Papper original source: Proceedings Of The 2018 12th Spanish Conference On Electron Devices, Cde 2018.
    APA: Abdelmoneam A; Iñiguez B; Fedawy M (2018). Compact Modelling of Quantum Confinement in III-V Gate All Around Nanowire MOSFET.
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Article's DOI: 10.1109/CDE.2018.8597131
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2018
    Publication Type: Proceedings Paper
  • Keywords:

    Nanowire mosfets
    Iii-v semiconductor
    Compact modeling
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