Author, as appears in the article.: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio;
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Lázaro Guillén, Antonio Ramon
Keywords: Thermal capacitance Substrate temperature Silicon-on-insulator (soi) mosfet Resistance Model Heat-transport Electrothermal characterization
Abstract: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.
Thematic Areas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 00189383
Author's mail: antonioramon.lazaro@urv.cat
Author identifier: 0000-0003-3160-5777
Record's date: 2023-02-18
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://ieeexplore.ieee.org/document/8816688
Papper original source: Ieee Transactions On Electron Devices. 66 (10): 4120-4125
APA: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio; (2019). Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs. Ieee Transactions On Electron Devices, 66(10), 4120-4125. DOI: 10.1109/TED.2019.2935500
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Article's DOI: 10.1109/TED.2019.2935500
Entity: Universitat Rovira i Virgili
Journal publication year: 2019
Publication Type: Journal Publications
Repositori URV