Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs

  • Identification data

    Identifier: imarina:5938160
    Handle: https://hdl.handle.net/20.500.11797/imarina5938160
    Authors:
    Gonzalez, BenitoAja, BeatrizArtal, EduardoLazaro, AntonioNunez, Antonio
    Abstract:
    Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.

  • Others:

    Author, as appears in the article.: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio;
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Lázaro Guillén, Antonio Ramon
    Keywords: Thermal capacitance Substrate temperature Silicon-on-insulator (soi) mosfet Resistance Model Heat-transport Electrothermal characterization
    Abstract: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.
    Thematic Areas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 00189383
    Author's mail: antonioramon.lazaro@urv.cat
    Author identifier: 0000-0003-3160-5777
    Record's date: 2023-02-18
    Papper version: info:eu-repo/semantics/acceptedVersion
    Papper original source: Ieee Transactions On Electron Devices. 66 (10): 4120-4125
    APA: Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Nunez, Antonio; (2019). Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs. Ieee Transactions On Electron Devices, 66(10), 4120-4125. DOI: 10.1109/TED.2019.2935500
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2019
    Publication Type: Journal Publications

  • Keywords:

    Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic,Physics, Applied
    Thermal capacitance
    Substrate temperature
    Silicon-on-insulator (soi) mosfet
    Resistance
    Model
    Heat-transport
    Electrothermal characterization
    Physics, applied
    Materiais
    Interdisciplinar
    Engineering, electrical & electronic
    Engenharias iv
    Engenharias ii
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Ciência da computação
    Astronomia / física

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