Author, as appears in the article.: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A
Department: Enginyeria Electrònica, Elèctrica i Automàtica
e-ISSN: 1557-9646
URV's Author/s: Iñiguez Nicolau, Benjamin
Keywords: Voltage measurement Verilog-a Transistors Thin film transistors Semiconductor device modeling Mobility Inverters Integrated circuit modeling Dynamic model Circuit simulator Capacitances model. Capacitances model Capacitance
Abstract: CCBY The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.
Thematic Areas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
licence for use: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 0018-9383
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2024-07-27
Papper version: info:eu-repo/semantics/publishedVersion
Link to the original source: https://ieeexplore.ieee.org/document/9296235
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Ieee Journal Of The Electron Devices Society. 9 464-468
APA: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A (2021). Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM). Ieee Journal Of The Electron Devices Society, 9(), 464-468. DOI: 10.1109/JEDS.2020.3045347
Article's DOI: 10.1109/JEDS.2020.3045347
Entity: Universitat Rovira i Virgili
Journal publication year: 2021
Publication Type: Journal Publications