Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM)

  • Identification data

    Identifier: imarina:9139049
    Handle: https://hdl.handle.net/20.500.11797/imarina9139049
    Authors:
    Hernandez-Barrios YGaspar-Angeles JNEstrada MIniguez BCerdeira A
    Abstract:
    CCBY The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.

  • Others:

    Author, as appears in the article.: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    e-ISSN: 1557-9646
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Voltage measurement Verilog-a Transistors Thin film transistors Semiconductor device modeling Mobility Inverters Integrated circuit modeling Dynamic model Circuit simulator Capacitances model. Capacitances model Capacitance
    Abstract: CCBY The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.
    Thematic Areas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    ISSN: 0018-9383
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2024-07-27
    Papper version: info:eu-repo/semantics/publishedVersion
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Ieee Journal Of The Electron Devices Society. 9 464-468
    APA: Hernandez-Barrios Y; Gaspar-Angeles JN; Estrada M; Iniguez B; Cerdeira A (2021). Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM). Ieee Journal Of The Electron Devices Society, 9(), 464-468. DOI: 10.1109/JEDS.2020.3045347
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2021
    Publication Type: Journal Publications

  • Keywords:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Voltage measurement
    Verilog-a
    Transistors
    Thin film transistors
    Semiconductor device modeling
    Mobility
    Inverters
    Integrated circuit modeling
    Dynamic model
    Circuit simulator
    Capacitances model.
    Capacitances model
    Capacitance
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

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