Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Large-Signal DG-MOSFET Modelling for RFID Rectification

  • Identification data

    Identifier: imarina:9282625
    Authors:
    Rodríguez RGonzález BGarcía JLázaro AIñiguez BHernández A
    Abstract:
    This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
  • Others:

    Author, as appears in the article.: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
    Keywords: Affordable and clean energy
    Abstract: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
    Thematic Areas: Química Physics, condensed matter Materiais Engenharias ii Condensed matter physics Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
    Author identifier: 0000-0003-3160-5777 0000-0002-6504-7980
    Record's date: 2024-11-16
    Papper version: info:eu-repo/semantics/publishedVersion
    Link to the original source: https://www.hindawi.com/journals/acmp/2016/8017139/
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Advances In Condensed Matter Physics. 2016 1-6
    APA: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), 1-6. DOI: 10.1155/2016/8017139
    Article's DOI: 10.1155/2016/8017139
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2016
    Publication Type: Journal Publications
  • Keywords:

    Condensed Matter Physics,Physics, Condensed Matter
    Affordable and clean energy
    Química
    Physics, condensed matter
    Materiais
    Engenharias ii
    Condensed matter physics
    Astronomia / física
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