Author, as appears in the article.: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Keywords: Affordable and clean energy
Abstract: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in Verilog-A. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. © 2016 R. Rodríguez et al.
Thematic Areas: Química Physics, condensed matter Materiais Engenharias ii Condensed matter physics Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
Author identifier: 0000-0003-3160-5777 0000-0002-6504-7980
Record's date: 2024-11-16
Papper version: info:eu-repo/semantics/publishedVersion
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Advances In Condensed Matter Physics. 2016 1-6
APA: Rodríguez R; González B; García J; Lázaro A; Iñiguez B; Hernández A (2016). Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances In Condensed Matter Physics, 2016(), 1-6. DOI: 10.1155/2016/8017139
Entity: Universitat Rovira i Virgili
Journal publication year: 2016
Publication Type: Journal Publications
Repositori URV