Author, as appears in the article.: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
Keywords: Velocity saturation Ultrathin films Thermal resistance Thermal conductivity Silicon-on- insulators (soi) Silicon on insulator technology Short-channel effect Self-heating effects (sse) Self-heating effect Output characteristics Mosfet devices Integrated circuits Heat resistance Fins (heat exchange) Fin-shaped field-effect transistor (finfet) Field effect transistors Equivalent thermal circuits Compact modelling
Abstract: DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers. © 2015 Elsevier Ltd. All rights reserved.
Thematic Areas: Surfaces, coatings and films Nanoscience and nanotechnology Nanoscience & nanotechnology Medicina ii Materiais Interdisciplinar Farmacia Ensino Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências biológicas ii Ciências biológicas i Ciência da computação Biodiversidade Atomic and molecular physics, and optics Astronomia / física Artes
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: antonioramon.lazaro@urv.cat benjamin.iniguez@urv.cat
Author identifier: 0000-0003-3160-5777 0000-0002-6504-7980
Record's date: 2024-07-27
Papper version: info:eu-repo/semantics/acceptedVersion
Link to the original source: https://www.sciencedirect.com/science/article/abs/pii/S0026269215000397
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Microelectronics Journal. 46 (4): 320-326
APA: González B; Roldán JB; Iñiguez B; Lázaro A; Cerdeira A (2015). DC self-heating effects modelling in SOI and bulk FinFETs. Microelectronics Journal, 46(4), 320-326. DOI: 10.1016/j.mejo.2015.02.003
Article's DOI: 10.1016/j.mejo.2015.02.003
Entity: Universitat Rovira i Virgili
Journal publication year: 2015
Publication Type: Journal Publications
Repositori URV