Articles producció científicaEnginyeria Electrònica, Elèctrica i Automàtica

DC self-heating effects modelling in SOI and bulk FinFETs

  • Identification data

    Identifier:  imarina:9285434
    Handle: https://hdl.handle.net/20.500.11797/imarina9285434
    Authors:  González, B; Roldán, JB; Iñiguez, B; Lázaro, A; Cerdeira, A
    Abstract:
    DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers. © 2015 Elsevier Ltd. All rights reserved.

  • Others:

    Link to the original source: https://www.sciencedirect.com/science/article/abs/pii/S0026269215000397
    APA: González, B; Roldán, JB; Iñiguez, B; Lázaro, A; Cerdeira, A (2015). DC self-heating effects modelling in SOI and bulk FinFETs. Microelectronics Journal, 46(4), 320-326. DOI: 10.1016/j.mejo.2015.02.003
    Paper original source: Microelectronics Journal. 46 (4): 320-326
    Article's DOI: 10.1016/j.mejo.2015.02.003
    Journal publication year: 2015-04-01
    Entity: Universitat Rovira i Virgili
    Paper version: info:eu-repo/semantics/acceptedVersion
    Record's date: 2026-05-09
    URV's Author/s: Iñiguez Nicolau, Benjamin / Lázaro Guillén, Antonio Ramon
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Publication Type: Journal Publications
    Author, as appears in the article.: González, B; Roldán, JB; Iñiguez, B; Lázaro, A; Cerdeira, A
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Thematic Areas: Surfaces, coatings and films, Nanoscience and nanotechnology, Nanoscience & nanotechnology, Engineering, electrical & electronic, Engenharias iv, Electronic, optical and magnetic materials, Electrical and electronic engineering, Condensed matter physics, Ciência da computação, Atomic and molecular physics, and optics
    Author's mail: antonioramon.lazaro@urv.cat, antonioramon.lazaro@urv.cat, benjamin.iniguez@urv.cat, benjamin.iniguez@urv.cat

  • Keywords:

    Velocity saturation
    Ultrathin films
    Thermal resistance
    Thermal conductivity
    Silicon-on- insulators (soi)
    Silicon on insulator technology
    Short-channel effect
    Self-heating effects (sse)
    Self-heating effect
    Output characteristics
    Mosfet devices
    Integrated circuits
    Heat resistance
    Fins (heat exchange)
    Fin-shaped field-effect transistor (finfet)
    Field effect transistors
    Equivalent thermal circuits
    Compact modelling
    Atomic and Molecular Physics
    and Optics
    Condensed Matter Physics
    Electrical and Electronic Engineering
    Electronic
    Optical and Magnetic Materials
    Engineering
    Electrical & Electronic
    Nanoscience & Nanotechnology
    Nanoscience and Nanotechnology
    Surfaces
    Coatings and Films
    Engenharias iv
    Ciência da computação

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