Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS)

  • Identification data

    Identifier: imarina:9285527
    Authors:
    Assili KAlouani KVilanova X
    Abstract:
    Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction 111. The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices. © 2017 IOP Publishing Ltd.
  • Others:

    Author, as appears in the article.: Assili K; Alouani K; Vilanova X
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Vilanova Salas, Javier
    Keywords: Xrd X ray diffraction Triphenylphosphine sulfide Tin compounds Tin Thin films Sulfur compounds Substrates Structural and optical properties Sns Refractive index Preferential orientation Orthorhombic structures Optoelectronic devices Optical data processing Optical constants Layered semiconductors Iv-vi semiconductors Extinction coefficient (k) Energy dispersive analysis of x-rays Crystal structure Chemical vapor deposition reactors Chemical vapor deposition Absorption co-efficient
    Abstract: Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction 111. The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices. © 2017 IOP Publishing Ltd.
    Thematic Areas: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: xavier.vilanova@urv.cat
    Author identifier: 0000-0002-6245-7933
    Record's date: 2024-09-07
    Papper version: info:eu-repo/semantics/acceptedVersion
    Link to the original source: https://iopscience.iop.org/article/10.1088/1361-6641/32/2/025002
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Papper original source: Semiconductor Science And Technology. 32 (2):
    APA: Assili K; Alouani K; Vilanova X (2017). Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS). Semiconductor Science And Technology, 32(2), -. DOI: 10.1088/1361-6641/32/2/025002
    Article's DOI: 10.1088/1361-6641/32/2/025002
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2017
    Publication Type: Journal Publications
  • Keywords:

    Condensed Matter Physics,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic,Materials Chemistry,Materials Science,Materials Science, Multidisciplinary,Physics, Condensed Matter
    Xrd
    X ray diffraction
    Triphenylphosphine sulfide
    Tin compounds
    Tin
    Thin films
    Sulfur compounds
    Substrates
    Structural and optical properties
    Sns
    Refractive index
    Preferential orientation
    Orthorhombic structures
    Optoelectronic devices
    Optical data processing
    Optical constants
    Layered semiconductors
    Iv-vi semiconductors
    Extinction coefficient (k)
    Energy dispersive analysis of x-rays
    Crystal structure
    Chemical vapor deposition reactors
    Chemical vapor deposition
    Absorption co-efficient
    Química
    Physics, condensed matter
    Materials science, multidisciplinary
    Materials science
    Materials chemistry
    Materiais
    Interdisciplinar
    Engineering, electrical & electronic
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Condensed matter physics
    Ciências agrárias i
    Biotecnología
    Astronomia / física
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