Author, as appears in the article.: Assili K; Alouani K; Vilanova X
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Vilanova Salas, Javier
Keywords: Xrd X ray diffraction Triphenylphosphine sulfide Tin compounds Tin Thin films Sulfur compounds Substrates Structural and optical properties Sns Refractive index Preferential orientation Orthorhombic structures Optoelectronic devices Optical data processing Optical constants Layered semiconductors Iv-vi semiconductors Extinction coefficient (k) Energy dispersive analysis of x-rays Crystal structure Chemical vapor deposition reactors Chemical vapor deposition Absorption co-efficient
Abstract: Tin sulfide (SnS) thin films have been deposited onto glass substrates using triphenylphosphine sulfide (Ph3PS) as a sulfur precursor in a chemical vapor deposition reactor in a temperature range of 250 °C-400 °C. The influence of the sulphidisation temperature in the crystal structure, surface morphology, chemical composition and optical properties has been investigated. X-ray diffraction, energy dispersive analysis of x-rays, and Raman spectroscopy showed that pure SnS thin films have been successfully obtained at 250 °C. All the deposited films were polycrystalline and showed orthorhombic structure, with a preferential orientation according to the direction 111. The optical measurements showed that the films deposited exhibited a direct allowed transition and have a relatively high absorption coefficient. The presence of mixed tin sulfide phases granted by the variation of the sulphidisation temperature has affected the optical properties of the deposited films. The refractive index (n) and extinction coefficient (k), has low values compared to conventional semiconductor materials. The grown films can be considered as a good light absorbing material and a promising candidate for application in optoelectronic devices. © 2017 IOP Publishing Ltd.
Thematic Areas: Química Physics, condensed matter Materials science, multidisciplinary Materials science Materials chemistry Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Condensed matter physics Ciências agrárias i Biotecnología Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: xavier.vilanova@urv.cat
Author identifier: 0000-0002-6245-7933
Record's date: 2024-09-07
Papper version: info:eu-repo/semantics/acceptedVersion
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Semiconductor Science And Technology. 32 (2):
APA: Assili K; Alouani K; Vilanova X (2017). Structural and optical properties of tin (II) sulfide thin films deposited using organophosphorus precursor (Ph3PS). Semiconductor Science And Technology, 32(2), -. DOI: 10.1088/1361-6641/32/2/025002
Entity: Universitat Rovira i Virgili
Journal publication year: 2017
Publication Type: Journal Publications
Repositori URV