Author, as appears in the article.: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Fadil, Dalal
Keywords: Transistors Mmic Microwave Integrated circuits Graphene Chemical-vapor-deposition Active balun 2d materials
Abstract: This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10 degrees and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.
Thematic Areas: Química Process chemistry and technology Physics, applied Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais Instrumentation General materials science General engineering Fluid flow and transfer processes Engineering, multidisciplinary Engineering (miscellaneous) Engineering (all) Engenharias ii Engenharias i Computer science applications Ciências biológicas iii Ciências biológicas ii Ciências biológicas i Ciências agrárias i Ciência de alimentos Chemistry, multidisciplinary Biodiversidade Astronomia / física
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: dalal.fadil@urv.cat
Author identifier: 0000-0002-2369-5074
Record's date: 2024-02-03
Papper version: info:eu-repo/semantics/publishedVersion
Papper original source: Applied Sciences-Basel. 10 (6):
APA: Fadil, D; Passi, V; Wei, W; Ben Salk, S; Zhou, D; Strupinski, W; Lemme, MC; Zimmer, T; Pallecchi, E; Happy, H; Fregonese, S (2020). A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology. Applied Sciences-Basel, 10(6), -. DOI: 10.3390/app10062183
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Entity: Universitat Rovira i Virgili
Journal publication year: 2020
Publication Type: Journal Publications
Repositori URV