Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Device Physics, Modeling and Simulation of Organic Electrochemical Transistors

  • Identification data

    Identifier: imarina:9296465
  • Authors:

    Koch M
    Tseng H
    Weissbach A
    Iniguez B
    Leo K
    Kloes A
    Kleemann H
    Darbandy G
  • Others:

    Author, as appears in the article.: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Capacitance Electrical double layer Electrolytes Ionization Logic gates Mathematical models Modeling Oects Semiconductor device measurement Semiconductor process modeling Simulation Synaptic devices
    Abstract: In this work, we investigate organic electrochemical transistors (OECTs) as a novel artificial electronic device for the realization of synaptic behavior, bioelectronics, and a variety of applications. A numerical method considering the Poisson-Boltzmann statistics is introduced to reproduce associated charge densities, electrostatics and switching properties of OECTs. We shed light on the working principle of OECTs by taking into account the ionic charge distribution in the electrolyte and incomplete ionization of the organic semiconductor describing the underlying electrochemical redox reaction. This enables analyzing the OECTs electrical performance as well as a simplified chemical properties via an electrical double layer, doping and de-doping of the OMIEC layer. We have fabricated, characterized, simulated and analyzed OECTs based on PEDOT:PSS, and we show that the proposed model reveals important properties of the device’s working mechanism. The model shows a good agreement with the experimental data of the fabricated devices.
    Thematic Areas: Biotechnology Electrical and electronic engineering Electronic, optical and magnetic materials Engineering, electrical & electronic
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2023-05-13
    Papper version: info:eu-repo/semantics/acceptedVersion
    Link to the original source: https://ieeexplore.ieee.org/document/10087327
    Papper original source: Ieee Journal Of The Electron Devices Society.
    APA: Koch M; Tseng H; Weissbach A; Iniguez B; Leo K; Kloes A; Kleemann H; Darbandy G (2023). Device Physics, Modeling and Simulation of Organic Electrochemical Transistors. Ieee Journal Of The Electron Devices Society, (), -. DOI: 10.1109/JEDS.2023.3263278
    Licence document URL: http://repositori.urv.cat/ca/proteccio-de-dades/
    Article's DOI: 10.1109/JEDS.2023.3263278
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2023
    Publication Type: Journal Publications
  • Keywords:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Capacitance
    Electrical double layer
    Electrolytes
    Ionization
    Logic gates
    Mathematical models
    Modeling
    Oects
    Semiconductor device measurement
    Semiconductor process modeling
    Simulation
    Synaptic devices
    Biotechnology
    Electrical and electronic engineering
    Electronic, optical and magnetic materials
    Engineering, electrical & electronic
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