Author, as appears in the article.: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G
Department: Enginyeria Electrònica, Elèctrica i Automàtica
URV's Author/s: Iñiguez Nicolau, Benjamin
Keywords: Variability Transistors Thin-film transistor Short channel Semiconductor device modeling Organic thin film transistors Organic semiconductor Noise Mathematical models Logic gates Integrated circuit modeling Device modeling Compact model Capacitance Adaptation models
Abstract: This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms.
Thematic Areas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
licence for use: https://creativecommons.org/licenses/by/3.0/es/
Author's mail: benjamin.iniguez@urv.cat
Author identifier: 0000-0002-6504-7980
Record's date: 2024-09-07
Papper version: info:eu-repo/semantics/publishedVersion
Link to the original source: https://ieeexplore.ieee.org/document/10179906
Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
Papper original source: Ieee Journal Of The Electron Devices Society.
APA: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G (2023). THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors. Ieee Journal Of The Electron Devices Society, (), -. DOI: 10.1109/JEDS.2023.3294598
Article's DOI: 10.1109/JEDS.2023.3294598
Entity: Universitat Rovira i Virgili
Journal publication year: 2023
Publication Type: Journal Publications
Repositori URV