Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET

  • Identification data

    Identifier: imarina:9329485
    Handle: https://hdl.handle.net/20.500.11797/imarina9329485
    Authors:
    Jaafar HAouaj ABouziane AIñiguez B
    Abstract:
    An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding-gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS.

  • Others:

    Author, as appears in the article.: Jaafar H; Aouaj A; Bouziane A; Iñiguez B
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Threshold voltage Subthreshold swing Short channel effects Parabolic approximation method Dual oxide thickness (dot)
    Abstract: An Analytical study for the surface potential, threshold voltage and Subthreshold swing (SS) of Dual-metal Gate Graded channel and Dual Oxide Thickness with two dielectric constant different cylindrical gate surrounding-gate (DMG-GC-DOTTDCD) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The performance of the modified structure was studied by developing physics-based analytical models for the surface potential, threshold voltage shift, and Subthreshold swing. It is shown that the novel MOSFET could significantly reduce threshold voltage shift and Subthreshold swing, can also provides improved electron transport and reduced short channel effects (SCE). Results reveal that the DMG-GC-DOTTDCD devices with different dielectric constant offer superior characteristics as compared to DMG-GC-DOT devices. The derived analytical models agree well with simulation by ATLAS.
    Thematic Areas: Logic Hardware and architecture Electrical and electronic engineering Computer science applications
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2023-09-16
    Papper version: info:eu-repo/semantics/publishedVersion
    Papper original source: International Journal Of Reconfigurable And Embedded Systems. 9 (1): 52-60
    APA: Jaafar H; Aouaj A; Bouziane A; Iñiguez B (2020). Surface potential modeling of dual metal gate-graded channel-dual oxide thickness with two dielectric constant different of surrounding gate MOSFET. International Journal Of Reconfigurable And Embedded Systems, 9(1), 52-60. DOI: 10.11591/ijres.v9.i1.pp52-60
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2020
    Publication Type: Journal Publications

  • Keywords:

    Computer Science Applications,Electrical and Electronic Engineering,Hardware and Architecture,Logic
    Threshold voltage
    Subthreshold swing
    Short channel effects
    Parabolic approximation method
    Dual oxide thickness (dot)
    Logic
    Hardware and architecture
    Electrical and electronic engineering
    Computer science applications

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