Vertical heterostructure of graphite-MoS2 for gas sensing

Identifier:  imarina:9369679

Handle: https://hdl.handle.net/20.500.11797/imarina9369679

Authors:  Tripathi, M; Deokar, G; Casanova-Chafer, J; Jin, J; Sierra-Castillo, A; Ogilvie, S P; Lee, F; Iyengar, S A; Biswas, A; Haye, E; Genovese, A; Llobet, E; Colomer, J -F; Jurewicz, I; Gadhamshetty, V; Ajayan, P M; Schwingenschlogl, Udo; Costa, Pedro M F J; Dalton, A B

Abstract:
2D materials, given their form-factor, high surface-to-volume ratio, and chemical functionality have immense use in sensor design. Engineering 2D heterostructures can result in robust combinations of desirable properties but sensor design methodologies require careful considerations about material properties and orientation to maximize sensor response. This study introduces a sensor approach that combines the excellent electrical transport and transduction properties of graphite film with chemical reactivity derived from the edge sites of semiconducting molybdenum disulfide (MoS2) through a two-step chemical vapour deposition method. The resulting vertical heterostructure shows potential for high-performance hybrid chemiresistors for gas sensing. This architecture offers active sensing edge sites across the MoS2 flakes. We detail the growth of vertically oriented MoS2 over a nanoscale graphite film (NGF) cross-section, enhancing the adsorption of analytes such as NO2, NH3, and water vapor. Raman spectroscopy, density functional theory calculations and scanning probe methods elucidate the influence of chemical doping by distinguishing the role of MoS2 edge sites relative to the basal plane. High-resolution imaging techniques confirm the controlled growth of highly crystalline hybrid structures. The MoS2/NGF hybrid structure exhibits exceptional chemiresistive responses at both room and elevated temperatures compared to bare graphitic layers. Quantitative analysis reveals that the sensitivity of this hybrid sensor surpasses other 2D material hybrids, particularly in parts per billion concentrations.