Autor según el artículo: Xavier Mateos; Josep Maria Serres; Venkatesan Jambunathan; Pavel Loiko; Haohai Yu; Huaijin Zhang; Junhai Liu; Antonio Lucianetti; Tomas Mocek; Konstantin Yumashev; Uwe Griebner; Valentin Petrov; Magdalena Aguiló; Francesc Díaz
Departamento: Química Física i Inorgànica
Autor/es de la URV: MATEOS FERRÉ, XAVIER; Josep Maria Serres; Venkatesan Jambunathan; Pavel Loiko; Haohai Yu; Huaijin Zhang; Junhai Liu; Antonio Lucianetti; Tomas Mocek; Konstantin Yumashev; Uwe Griebner; Valentin Petrov; AGUILÓ DÍAZ, MAGDALENA; DÍAZ GONZÁLEZ, FRANCISCO MANUEL
Palabras clave: Microchip lasers Laser sources
Resumen: Continuous-wave microchip laser operation and thermal lensing are studied for Yb-doped gallium garnets, Yb:LuGG, Yb:YGG, Yb:CNGG and Yb:CLNGG under diode-pumping at ~932 and 969 nm. It is shown that although thermal the conductivity of Ga garnets is lower than that of Yb:YAG, the compromised thermo-optic properties, high absorption in the zero-phonon line and low internal loss make the ordered Yb:YGG and Yb:LuGG crystals to be promising for compact highly efficient microchip lasers. In particular, Yb:LuGG microchip laser generated 8.97 W of output power with a slope efficiency η = 75% and 9.31 W with η = 65%, for pumping at 932 and 969 nm, respectively. Multi-watt output in the range 1039–1078 nm is emitted for different transmission of the output coupler. The sensitivity factor of the thermal lens for this crystal is 2.1 m−1/W (pumping at 969 nm with a pump waist radius of 100 μm) and the estimated thermal conductivity is 5.8 ± 0.5 W/mK. Power scaling of Yb:CNGG and Yb:CLNGG microchip lasers is limited by poor thermo-optic properties and high internal losses. Ordered Ga garnets show good prospects for the development of passively Q-switched microchip lasers with high pulse energies.
Grupo de investigación: Física i Cristal·lografia de Nanomaterials Física i Cristal.lografia de Materials
Áreas temáticas: Chemistry Química Química
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 2159-3930
Identificador del autor: 0000-0003-1940-1990; ; ; ; ; ; ; ; ; ; ; ; 0000-0001-6130-9579; 0000-0003-4581-4967
Fecha de alta del registro: 2017-05-25
Página final: 57
Volumen de revista: 6
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://www.osapublishing.org/ome/abstract.cfm?uri=ome-6-1-46
Programa de financiación: altres; Icrea Academia; 2010ICREA-02 f altres; Grupos consolidados; 2014SGR1358 plan; Retos; TEC2014-55948-R plan; Retos; MAT2013-47395-C4-4-R
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
DOI del artículo: 10.1364/OME.6.000046
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2015
Página inicial: 46
Tipo de publicación: Article Artículo Article
Repositori URV