Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

  • Datos identificativos

    Identificador: imarina:9243274
    Handle: https://hdl.handle.net/20.500.11797/imarina9243274
    Autores:
    Roemer CDarbandy GSchwarz MTrommer JHeinzig AMikolajick TWeber WMIniguez BKloes A
    Resumen:
    A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.

  • Otros:

    Autor según el artículo: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Iñiguez Nicolau, Benjamin
    Palabras clave: Tunneling current. Tunneling Transistors Thermionic emission Silicon-nanowire transistors Schottky barriers Schottky barrier Sbfet Rfet Mathematical models Logic gates Junctions Field emission Electric potential Compact modeling Closed-form tunneling current tunneling transistors thermionic emission schottky barriers schottky barrier sbfet rfet mathematical models junctions field emission electric potential compact modeling closed-form
    Resumen: A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
    Áreas temáticas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: benjamin.iniguez@urv.cat
    Identificador del autor: 0000-0002-6504-7980
    Fecha de alta del registro: 2024-09-07
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society. 10 416-423
    Referencia de l'ítem segons les normes APA: Roemer C; Darbandy G; Schwarz M; Trommer J; Heinzig A; Mikolajick T; Weber WM; Iniguez B; Kloes A (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. Ieee Journal Of The Electron Devices Society, 10(), 416-423. DOI: 10.1109/JEDS.2021.3136981
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2022
    Tipo de publicación: Journal Publications

  • Palabras clave:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Tunneling current.
    Tunneling
    Transistors
    Thermionic emission
    Silicon-nanowire transistors
    Schottky barriers
    Schottky barrier
    Sbfet
    Rfet
    Mathematical models
    Logic gates
    Junctions
    Field emission
    Electric potential
    Compact modeling
    Closed-form
    tunneling current
    tunneling
    transistors
    thermionic emission
    schottky barriers
    schottky barrier
    sbfet
    rfet
    mathematical models
    junctions
    field emission
    electric potential
    compact modeling
    closed-form
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

  • Documentos:

    DocumentPrincipal

  • Cerca a google

    Search to google scholar