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THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors

  • Datos identificativos

    Identificador: imarina:9325772
    Handle: https://hdl.handle.net/20.500.11797/imarina9325772
    Autores:
    Kloes ALeise JPruefer JNikolaou AIniguez BGneiting TKlauk HDarbandy G
    Resumen:
    This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms.

  • Otros:

    Autor según el artículo: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G
    Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/es de la URV: Iñiguez Nicolau, Benjamin
    Palabras clave: Variability Transistors Thin-film transistor Short channel Semiconductor device modeling Organic thin film transistors Organic semiconductor Noise Mathematical models Logic gates Integrated circuit modeling Device modeling Compact model Capacitance Adaptation models
    Resumen: This paper presents a compact model for organic thin-film transistors fabricated in the staggered or coplanar device architecture which includes short-channel effects related to the potential barrier in the channel region, which manifest themselves as threshold voltage roll-off, drain-induced barrier lowering, and subthreshold swing degradation. Furthermore, the effect of non-linear injection due to a work-function mismatch between the source/drain contacts and the semiconductor is considered. The model includes a charge-based capacitance model considering overlap and fringing regions in short-channel multi-finger layout structures. Extensions include a model for drain-current variability, low-frequency noise and non-quasistatic effects. The introduction of physically meaningful fitting parameters provides a high degree of flexibility to the model. The equation package is verified using the results of measurements performed on transistors fabricated on flexible substrates and is available in Verilog-A for an efficient circuit simulation on different design platforms.
    Áreas temáticas: Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
    Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
    Direcció de correo del autor: benjamin.iniguez@urv.cat
    Identificador del autor: 0000-0002-6504-7980
    Fecha de alta del registro: 2024-09-07
    Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
    Enlace a la fuente original: https://ieeexplore.ieee.org/document/10179906
    URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referencia al articulo segun fuente origial: Ieee Journal Of The Electron Devices Society.
    Referencia de l'ítem segons les normes APA: Kloes A; Leise J; Pruefer J; Nikolaou A; Iniguez B; Gneiting T; Klauk H; Darbandy G (2023). THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors. Ieee Journal Of The Electron Devices Society, (), -. DOI: 10.1109/JEDS.2023.3294598
    DOI del artículo: 10.1109/JEDS.2023.3294598
    Entidad: Universitat Rovira i Virgili
    Año de publicación de la revista: 2023
    Tipo de publicación: Journal Publications

  • Palabras clave:

    Biotechnology,Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Engineering, Electrical & Electronic
    Variability
    Transistors
    Thin-film transistor
    Short channel
    Semiconductor device modeling
    Organic thin film transistors
    Organic semiconductor
    Noise
    Mathematical models
    Logic gates
    Integrated circuit modeling
    Device modeling
    Compact model
    Capacitance
    Adaptation models
    Engineering, electrical & electronic
    Electronic, optical and magnetic materials
    Electrical and electronic engineering
    Biotechnology

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