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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs - imarina:9230611

Autor/s de la URV:Iñiguez Nicolau, Benjamin
Autor segons l'article:Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed;
Adreça de correu electrònic de l'autor:benjamin.iniguez@urv.cat
Identificador de l'autor:0000-0002-6504-7980
Any de publicació de la revista:2021
Tipus de publicació:Journal Publications
Referència de l'ítem segons les normes APA:Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
Referència a l'article segons font original:Ieee Journal Of The Electron Devices Society. 9 911-932
Resum:We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
DOI de l'article:10.1109/JEDS.2021.3106836
Enllaç font original:https://ieeexplore.ieee.org/document/9520649
Versió de l'article dipositat:info:eu-repo/semantics/publishedVersion
Accès a la llicència d'ús:https://creativecommons.org/licenses/by/3.0/es/
Departament:Enginyeria Electrònica, Elèctrica i Automàtica
URL Document de llicència:https://repositori.urv.cat/ca/proteccio-de-dades/
Àrees temàtiques:Engineering, electrical & electronic
Electronic, optical and magnetic materials
Electrical and electronic engineering
Biotechnology
Paraules clau:Voltage-dependence
Threshold voltage
Thin-film transistors
Thin film transistors
Semiconductor device noise
Semiconductor device modeling
Parameter extraction
Organic thin film transistors
Mobility
Mathematical model
Low-frequency noise
Integrated circuit modeling
Field-effect transistors
Computational modeling
Charge-transport
Capacitance
Biological system modeling
Analytic model
1/f noise
Entitat:Universitat Rovira i Virgili
Data d'alta del registre:2024-07-27
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