Repositori institucional URV
Español Català English
TÍTULO:
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs - imarina:9230611

Autor/es de la URV:Iñiguez Nicolau, Benjamin
Autor según el artículo:Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed;
Direcció de correo del autor:benjamin.iniguez@urv.cat
Identificador del autor:0000-0002-6504-7980
Año de publicación de la revista:2021
Tipo de publicación:Journal Publications
Referencia de l'ítem segons les normes APA:Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
Referencia al articulo segun fuente origial:Ieee Journal Of The Electron Devices Society. 9 911-932
Resumen:We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
DOI del artículo:10.1109/JEDS.2021.3106836
Enlace a la fuente original:https://ieeexplore.ieee.org/document/9520649
Versión del articulo depositado:info:eu-repo/semantics/publishedVersion
Acceso a la licencia de uso:https://creativecommons.org/licenses/by/3.0/es/
Departamento:Enginyeria Electrònica, Elèctrica i Automàtica
URL Documento de licencia:https://repositori.urv.cat/ca/proteccio-de-dades/
Áreas temáticas:Engineering, electrical & electronic
Electronic, optical and magnetic materials
Electrical and electronic engineering
Biotechnology
Palabras clave:Voltage-dependence
Threshold voltage
Thin-film transistors
Thin film transistors
Semiconductor device noise
Semiconductor device modeling
Parameter extraction
Organic thin film transistors
Mobility
Mathematical model
Low-frequency noise
Integrated circuit modeling
Field-effect transistors
Computational modeling
Charge-transport
Capacitance
Biological system modeling
Analytic model
1/f noise
Entidad:Universitat Rovira i Virgili
Fecha de alta del registro:2024-07-27
Busca tu registro en:

Archivos desponibles
ArchivoDescripciónFormato
DocumentPrincipalDocumentPrincipalapplication/pdf

Información

© 2011 Universitat Rovira i Virgili