Autor/es de la URV: | Iñiguez Nicolau, Benjamin
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Autor según el artículo: | Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, Gerwin; Gneiting, Thomas; Mohamed, Firas; Ghibaudo, Gerard; Cerdeira, Antonio; Estrada, Magali; Mijalkovic, Slobodan; Nejim, Ahmed;
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Direcció de correo del autor: | benjamin.iniguez@urv.cat
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Identificador del autor: | 0000-0002-6504-7980
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Año de publicación de la revista: | 2021
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Tipo de publicación: | Journal Publications
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Referencia de l'ítem segons les normes APA: | Iniguez, Benjamin; Nathan, Arokia; Kloes, Alexander; Bonnassieux, Yvan; Romanjek, Krunoslav; Charbonneau, Micael; Van der Steen, Jan Laurens; Gelinck, (2021). New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs. Ieee Journal Of The Electron Devices Society, 9(), 911-932. DOI: 10.1109/JEDS.2021.3106836
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Referencia al articulo segun fuente origial: | Ieee Journal Of The Electron Devices Society. 9 911-932
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Resumen: | We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of these devices. In particular, using different approaches, analytical equations were formulated to model the Density of States (DOS), different transport mechanisms, trapping/de-trapping, drain current, stress, capacitances, frequency dispersion and noise. The final TFT models were, after implementation in Verilog-A, validated by means of the design and simulation of test circuits.
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DOI del artículo: | 10.1109/JEDS.2021.3106836
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Enlace a la fuente original: | https://ieeexplore.ieee.org/document/9520649
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Versión del articulo depositado: | info:eu-repo/semantics/publishedVersion
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Acceso a la licencia de uso: | https://creativecommons.org/licenses/by/3.0/es/
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Departamento: | Enginyeria Electrònica, Elèctrica i Automàtica
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URL Documento de licencia: | https://repositori.urv.cat/ca/proteccio-de-dades/
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Áreas temáticas: | Engineering, electrical & electronic Electronic, optical and magnetic materials Electrical and electronic engineering Biotechnology
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Palabras clave: | Voltage-dependence Threshold voltage Thin-film transistors Thin film transistors Semiconductor device noise Semiconductor device modeling Parameter extraction Organic thin film transistors Mobility Mathematical model Low-frequency noise Integrated circuit modeling Field-effect transistors Computational modeling Charge-transport Capacitance Biological system modeling Analytic model 1/f noise
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Entidad: | Universitat Rovira i Virgili
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Fecha de alta del registro: | 2024-07-27
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