Autor segons l'article: Loiko, Pavel; Boguslawski, Jakub; Maria Serres, Josep; Kifle, Esrom; Kowalczyk, Maciej; Mateos, Xavier; Sotor, Jaroslaw; Zybala, Rafal; Mars, Krzysztof; Mikula, Andrzej; Kaszyca, Kamil; Aguilo, Magdalena; Diaz, Francesc; Griebner, Uwe; Petrov, Valentin
Departament: Química Física i Inorgànica
Autor/s de la URV: Aguiló Díaz, Magdalena / Díaz Castrillón, Fernanda / Díaz González, Francisco Manuel / Mateos Ferré, Xavier / Serres Serres, Josep Maria
Paraules clau: Affordable and clean energy
Resum: © 2018 Optical Society of America. We report on the first application of an antimony telluride (Sb2Te3) thin film as a saturable absorber (SA) in a microchip laser. The 3-15 nm-thick Sb2Te3films were deposited on glass substrates by pulsed magnetron sputtering and they were studied by SEM, X-ray diffraction, Raman and optical spectroscopy. The saturable absorption of the Sb2Te3film was confirmed at 1.56 μm for ns-long pulses revealing low saturation intensity of 0.17 MW/cm2. The microchip laser was based on a Tm:GdVO4crystal diode-pumped at ~802 nm. In the continuous-wave regime, this laser generated 3.54 W at 1905-1921 nm with a slope efficiency of 37%. The Q-switched laser generated a maximum average output power of 0.70 W at 1913 nm. The highest pulse energy of 3.5 μJ and the shortest pulse duration of 223 ns were obtained at the 200 kHz repetition rate.
Àrees temàtiques: Química Optics Materials science, multidisciplinary Materiais Interdisciplinar Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Biotecnología Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 21593930
Adreça de correu electrònic de l'autor: josepmaria.serres@urv.cat fernanda.diaz@estudiants.urv.cat magdalena.aguilo@urv.cat xavier.mateos@urv.cat f.diaz@urv.cat
Identificador de l'autor: 0000-0002-4299-538X 0000-0001-6130-9579 0000-0003-1940-1990 0000-0003-4581-4967
Pàgina final: 1732
Data d'alta del registre: 2024-11-16
Volum de revista: 8
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://www.osapublishing.org/ome/abstract.cfm?uri=ome-8-7-1723
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Optical Materials Express. 8 (7): 1723-1732
Referència de l'ítem segons les normes APA: Loiko, Pavel; Boguslawski, Jakub; Maria Serres, Josep; Kifle, Esrom; Kowalczyk, Maciej; Mateos, Xavier; Sotor, Jaroslaw; Zybala, Rafal; Mars, Krzyszto (2018). Sb2Te3thin film for the passive Q-switching of a Tm:GdVO4laser. Optical Materials Express, 8(7), 1723-1732. DOI: 10.1364/OME.8.001723
DOI de l'article: 10.1364/OME.8.001723
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2018
Pàgina inicial: 1723
Tipus de publicació: Journal Publications
Repositori URV