Autor segons l'article: Maria Serres, Josep; Jambunathan, Venkatesan; Loiko, Pavel; Mateos, Xavier; Yu, Haohai; Zhang, Huaijin; Liu, Junhai; Lucianetti, Antonio; Mocek, Tomas; Yumashev, Konstantin; Griebner, Uwe; Petrov, Valentin; Aguilo, Magdalena; Diaz, Francesc;
Departament: Química Física i Inorgànica
Autor/s de la URV: Aguiló Díaz, Magdalena / Díaz González, Francisco Manuel / Mateos Ferré, Xavier / Serres Serres, Josep Maria
Paraules clau: Y3al5o12 Thermal-conductivity Temperature Performance Crystal
Resum: Continuous-wave microchip laser operation and thermal lensing are studied for Yb-doped gallium garnets, Yb:LuGG, Yb:YGG, Yb:CNGG and Yb:CLNGG under diode-pumping at similar to 932 and 969 nm. It is shown that although thermal the conductivity of Ga garnets is lower than that of Yb:YAG, the compromised thermo-optic properties, high absorption in the zero-phonon line and low internal loss make the ordered Yb: YGG and Yb: LuGG crystals to be promising for compact highly efficient microchip lasers. In particular, Yb: LuGG microchip laser generated 8.97 W of output power with a slope efficiency eta = 75% and 9.31 W with eta = 65%, for pumping at 932 and 969 nm, respectively. Multi-watt output in the range 1039-1078 nm is emitted for different transmission of the output coupler. The sensitivity factor of the thermal lens for this crystal is 2.1 m(-1)/W (pumping at 969 nm with a pump waist radius of 100 mu m) and the estimated thermal conductivity is 5.8 +/- 0.5 W/mK. Power scaling of Yb: CNGG and Yb: CLNGG microchip lasers is limited by poor thermo-optic properties and high internal losses. Ordered Ga garnets show good prospects for the development of passively Q-switched microchip lasers with high pulse energies. (C)2015 Optical Society of America
Àrees temàtiques: Química Optics Materials science, multidisciplinary Materiais Interdisciplinar Engenharias iv Engenharias iii Engenharias ii Electronic, optical and magnetic materials Biotecnología Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: josepmaria.serres@urv.cat f.diaz@urv.cat xavier.mateos@urv.cat magdalena.aguilo@urv.cat
Identificador de l'autor: 0000-0002-4299-538X 0000-0003-4581-4967 0000-0003-1940-1990 0000-0001-6130-9579
Data d'alta del registre: 2024-06-22
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://opg.optica.org/ome/fulltext.cfm?uri=ome-6-1-46&id=333187
URL Document de llicència: http://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Optical Materials Express. 6 (1): 46-57
Referència de l'ítem segons les normes APA: Maria Serres, Josep; Jambunathan, Venkatesan; Loiko, Pavel; Mateos, Xavier; Yu, Haohai; Zhang, Huaijin; Liu, Junhai; Lucianetti, Antonio; Mocek, Tomas (2016). Microchip laser operation of Yb-doped gallium garnets. Optical Materials Express, 6(1), 46-57. DOI: 10.1364/OME.6.000046
DOI de l'article: 10.1364/OME.6.000046
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2016
Tipus de publicació: Journal Publications
Repositori URV