Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance

  • Dades identificatives

    Identificador: imarina:9242569
    Autors:
    Leise, JakobPruefer, JakobDarbandy, GhaderNikolaou, AristeidisGiorgio, MicheleCaironi, MarioZschieschang, UteKlauk, HagenKloes, AlexanderIniguez, BenjaminBorchert, James W.
    Resum:
    The development of organic thin-film transistors (TFTs) for high-frequency applications requires a detailed understanding of the intrinsic and extrinsic factors that influence their dynamic performance. This includes a wide range of properties, such as the device architecture, the contact resistance, parasitic capacitances, and intentional or unintentional asymmetries of the gate-to-contact overlaps. Here, we present a comprehensive analysis of the dynamic characteristics of the highest-performing flexible organic TFTs reported to date. For this purpose, we have developed the first compact model that provides a complete and accurate closed-form description of the frequency-dependent small-signal gain of organic field-effect transistors. The model properly accounts for all relevant secondary effects, such as the contact resistance, fringe capacitances, the subthreshold regime, charge traps, and non-quasistatic effects. We have analyzed the frequency behavior of low-voltage organic transistors fabricated in both coplanar and staggered device architectures on flexible plastic substrates. We show through S-parameter measurements that coplanar transistors yield more ideal small-signal characteristics with only a weak dependence on the overlap asymmetry. In contrast, the high-frequency behavior of staggered transistors suffers from a more pronounced dependence on the asymmetry. Using our advanced compact model, we elucidate the factors influencing the frequency-dependent small-signal gain and find that even though coplanar transistors have larger capacitances than staggered transistors, they benefit from substantially larger transconductances, which is the main reason for their superior dynamic performance.
  • Altres:

    Autor segons l'article: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W.;
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin / Nikolaou, Aristeidis
    Paraules clau: Voltage-dependence Thin-film transistors Resistance Operation Model Mobility Large-area Capacitance voltage-dependence resistance operation model mobility large-area capacitance
    Resum: The development of organic thin-film transistors (TFTs) for high-frequency applications requires a detailed understanding of the intrinsic and extrinsic factors that influence their dynamic performance. This includes a wide range of properties, such as the device architecture, the contact resistance, parasitic capacitances, and intentional or unintentional asymmetries of the gate-to-contact overlaps. Here, we present a comprehensive analysis of the dynamic characteristics of the highest-performing flexible organic TFTs reported to date. For this purpose, we have developed the first compact model that provides a complete and accurate closed-form description of the frequency-dependent small-signal gain of organic field-effect transistors. The model properly accounts for all relevant secondary effects, such as the contact resistance, fringe capacitances, the subthreshold regime, charge traps, and non-quasistatic effects. We have analyzed the frequency behavior of low-voltage organic transistors fabricated in both coplanar and staggered device architectures on flexible plastic substrates. We show through S-parameter measurements that coplanar transistors yield more ideal small-signal characteristics with only a weak dependence on the overlap asymmetry. In contrast, the high-frequency behavior of staggered transistors suffers from a more pronounced dependence on the asymmetry. Using our advanced compact model, we elucidate the factors influencing the frequency-dependent small-signal gain and find that even though coplanar transistors have larger capacitances than staggered transistors, they benefit from substantially larger transconductances, which is the main reason for their superior dynamic performance.
    Àrees temàtiques: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Condensed matter physics Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física Antropologia / arqueologia
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: aristeidis.nikolaou@estudiants.urv.cat benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2024-07-27
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Enllaç font original: https://pubs.aip.org/aip/jap/article-abstract/130/12/125501/280806/Flexible-megahertz-organic-transistors-and-the?redirectedFrom=fulltext
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Referència a l'article segons font original: Journal Of Applied Physics. 130 (12): 125501-
    Referència de l'ítem segons les normes APA: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexan (2021). Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance. Journal Of Applied Physics, 130(12), 125501-. DOI: 10.1063/5.0062146
    DOI de l'article: 10.1063/5.0062146
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2021
    Tipus de publicació: Journal Publications
  • Paraules clau:

    Atomic and Molecular Physics, and Optics,Condensed Matter Physics,Physics and Astronomy (Miscellaneous),Physics, Applied
    Voltage-dependence
    Thin-film transistors
    Resistance
    Operation
    Model
    Mobility
    Large-area
    Capacitance
    voltage-dependence
    resistance
    operation
    model
    mobility
    large-area
    capacitance
    Química
    Physics, applied
    Physics and astronomy (miscellaneous)
    Physics and astronomy (all)
    Odontología
    Medicina iii
    Medicina ii
    Medicina i
    Materiais
    Matemática / probabilidade e estatística
    Interdisciplinar
    Geociências
    General physics and astronomy
    Farmacia
    Ensino
    Engenharias iv
    Engenharias iii
    Engenharias ii
    Engenharias i
    Condensed matter physics
    Ciências biológicas iii
    Ciências biológicas i
    Ciências ambientais
    Ciências agrárias i
    Ciência da computação
    Biotecnología
    Biodiversidade
    Atomic and molecular physics, and optics
    Astronomia / física
    Antropologia / arqueologia
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