Autor segons l'article: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexander; Iniguez, Benjamin; Borchert, James W.;
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin / Nikolaou, Aristeidis
Paraules clau: Voltage-dependence Thin-film transistors Resistance Operation Model Mobility Large-area Capacitance voltage-dependence resistance operation model mobility large-area capacitance
Resum: The development of organic thin-film transistors (TFTs) for high-frequency applications requires a detailed understanding of the intrinsic and extrinsic factors that influence their dynamic performance. This includes a wide range of properties, such as the device architecture, the contact resistance, parasitic capacitances, and intentional or unintentional asymmetries of the gate-to-contact overlaps. Here, we present a comprehensive analysis of the dynamic characteristics of the highest-performing flexible organic TFTs reported to date. For this purpose, we have developed the first compact model that provides a complete and accurate closed-form description of the frequency-dependent small-signal gain of organic field-effect transistors. The model properly accounts for all relevant secondary effects, such as the contact resistance, fringe capacitances, the subthreshold regime, charge traps, and non-quasistatic effects. We have analyzed the frequency behavior of low-voltage organic transistors fabricated in both coplanar and staggered device architectures on flexible plastic substrates. We show through S-parameter measurements that coplanar transistors yield more ideal small-signal characteristics with only a weak dependence on the overlap asymmetry. In contrast, the high-frequency behavior of staggered transistors suffers from a more pronounced dependence on the asymmetry. Using our advanced compact model, we elucidate the factors influencing the frequency-dependent small-signal gain and find that even though coplanar transistors have larger capacitances than staggered transistors, they benefit from substantially larger transconductances, which is the main reason for their superior dynamic performance.
Àrees temàtiques: Química Physics, applied Physics and astronomy (miscellaneous) Physics and astronomy (all) Odontología Medicina iii Medicina ii Medicina i Materiais Matemática / probabilidade e estatística Interdisciplinar Geociências General physics and astronomy Farmacia Ensino Engenharias iv Engenharias iii Engenharias ii Engenharias i Condensed matter physics Ciências biológicas iii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência da computação Biotecnología Biodiversidade Atomic and molecular physics, and optics Astronomia / física Antropologia / arqueologia
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: aristeidis.nikolaou@estudiants.urv.cat benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://pubs.aip.org/aip/jap/article-abstract/130/12/125501/280806/Flexible-megahertz-organic-transistors-and-the?redirectedFrom=fulltext
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Journal Of Applied Physics. 130 (12): 125501-
Referència de l'ítem segons les normes APA: Leise, Jakob; Pruefer, Jakob; Darbandy, Ghader; Nikolaou, Aristeidis; Giorgio, Michele; Caironi, Mario; Zschieschang, Ute; Klauk, Hagen; Kloes, Alexan (2021). Flexible megahertz organic transistors and the critical role of the device geometry on their dynamic performance. Journal Of Applied Physics, 130(12), 125501-. DOI: 10.1063/5.0062146
DOI de l'article: 10.1063/5.0062146
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2021
Tipus de publicació: Journal Publications