Autor según el artículo: Smaani, B. Latreche, S. Iñiguez, B.

Versión del articulo depositado: info:eu-repo/semantics/publishedVersion

Enlace a la fuente original: http://scitation.aip.org/content/aip/journal/jap/114/22/10.1063/1.4844395

Departamento: Enginyeria Electrònica, Elèctrica i Automàtica

e-ISSN: 1089-7550

DOI del artículo: 10.1063/1.4844395

Resumen: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.

Entidad: Universitat Rovira i Virgili.

Año de publicación de la revista: 2013

Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/

ISSN: 0021-8979

Volumen de revista: 114