Crystal growth

Identificador:  imarina:3823828

Handle: https://hdl.handle.net/20.500.11797/imarina3823828

Autores:  Zhang, Xuzhao; Loiko, Pavel; Mateos, Xavier; Maria Serres, Josep; Ren, Junyu; Guo, Jiayi; Cheng, Rui; Gao, Cunyuan; Dong, Qing; Jambunathan, Venkatesan; Lucianetti, Antonio; Mocek, Tomas; Vilejshikova, Elena; Griebner, Uwe; Petrov, Valentin; Wang, Zhengping; Guo, Shiyi; Xu, Xinguang; Aguilo, Magdalena; Diaz, Francesc

Resumen:
© 2018 Elsevier B.V. We report on the crystal growth, structure, room- and low-temperature (6 K) absorption and emission spectroscopy of a 3 at% Yb 3+ -doped trigonal ordered langasite-type silicate crystal, Ca 3 NbGa 3 Si 2 O 14 (Yb: CNGS). The Rietveld refinement data are presented. Absorption, stimulated-emission and gain cross-sections are determined for the Yb 3+ ion in CNGS for ? and ? polarizations. The maximum stimulated emission cross-section amounts to ? SE = 0.97 × 10 ?20 cm ?2 at 1014 nm (?-polarization). The Stark splitting of the Yb 3+ multiplets is resolved. Microchip laser operation is obtained with both a-cut and c-cut 3 at% Yb: CNGS samples under end-pumping at 976 nm by a Volume Bragg Grating-stabilized diode laser. For the latter cut, the maximum output power reaches 7.61 W at 1048–1060 nm with a slope efficiency of 59%. By varying the output coupling, multi-watt emission over a 50 nm-broad spectral range is achieved.