Repositori URV

Identificador: imarina:6016206

Handle: https://hdl.handle.net/20.500.11797/imarina6016206

Autores:
Mateos, XavierLoiko, PavelLamrini, SamirScholle, KarstenFuhrberg, PeterVatnik, SergeiVedin, IvanAguilo, MagdalenaDiaz, FrancescGriebner, UwePetrov, Valentin

Resumen:
Thin (similar to 250 mu m) crystalline layers of monoclinic Ho3+-doped KY(WO4)(2) grown by the liquid phase epitaxy method on (010)-oriented undoped KY(WO4)(2) substrates are promising for the development of thin-disk lasers at similar to 2.1 mu m. Using a single-bounce pump geometry, 3 at.% and 5 at.% Ho: KY(WO4)(2) thin-disk lasers delivering output powers of > 1 W at 2056 nm and 2073 nm are demonstrated. The laser performance, beam quality and thermo-optic aberrations of such lasers are strongly affected by the Ho3+ doping concentration. For the 3 at.% Ho3+-doped thin-disk, the thermal lens is negative (the sensitivity factors for the two principal meridional planes, MA(B), are -1.7 and -0.7 m(-1)/W) and astigmatic. For higher Ho3+ doping (5-10 at.%), the effect of upconversion and end-bulging of the disk enhances the thermo-optic aberrations leading to a deteriorated laser performance. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement