Autor según el artículo: Kamnev, Kirill; Pytlicek, Zdenek; Bendova, Maria; Prasek, Jan; Gispert-Guirado, Francesc; Llobet, Eduard; Mozalev, Alexander
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Gispert Guirado, Francesc / GUIRADO PAGÉS, FRANCISCO / Llobet Valero, Eduard
Palabras clave: Porous-alumina Porous anodic alumina Performance Oxide Niobium Nanocomposite films Mim capacitors Metallization Layer Integrated passives Insulator-metal capacitors Films Dielectric Anodizing Anodization Alumina-assisted growth Al2o3-zro2 Al o -zro 2 3 2
Resumen: The need for integrated passive devices (IPDs) emerges from the increasing consumer demand for electronic product miniaturization. Metal-insulator-metal (MIM) capacitors are vital components of IPD systems. Developing new materials and technologies is essential for advancing capacitor characteristics and co-integrating with other electronic passives. Here we present an innovative electrochemical technology joined with the sputter-deposition of Al and Zr layers to synthesize novel planar nanocomposite metal-oxide dielectrics consisting of ZrO2 nanorods self-embedded into the nanoporous Al2O3 matrix such that its pores are entirely filled with zirconium oxide. The technology is utilized in MIM capacitors characterized by modern surface and interface analysis techniques and electrical measurements. In the 95-480 nm thickness range, the best-achieved MIM device characteristics are the one-layer capacitance density of 112 nF center dot cm(-2), the loss tangent of 4 center dot 10(-3) at frequencies up to 1 MHz, the leakage current density of 40 pA center dot cm(-2), the breakdown field strength of up to 10 MV center dot cm(-1), the energy density of 100 J center dot cm(-3), the quadratic voltage coefficient of capacitance of 4 ppm center dot V-2, and the temperature coefficient of capacitance of 480 ppm center dot K-1 at 293-423 K at 1 MHz. The outstanding performance, stability, and tunable capacitors' characteristics allow for their application in low-pass filters, coupling/decoupling/bypass circuits, RC oscillators, energy-storage devices, ultrafast charge/discharge units, or high-precision analog-to-digital converters. The capacitor technology based on the non-porous planar anodic-oxide dielectrics complements the electrochemical conception of IPDs that combined, until now, the anodized aluminum interconnection, microresistors, and microinductors, all co-related in one system for use in portable electronic devices.
Áreas temáticas: Química Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais General materials science Engenharias iii Engenharias ii Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: eduard.llobet@urv.cat
Identificador del autor: 0000-0001-6164-4342
Fecha de alta del registro: 2024-10-12
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Science And Technology Of Advanced Materials. 24 (1): 2162324-
Referencia de l'ítem segons les normes APA: Kamnev, Kirill; Pytlicek, Zdenek; Bendova, Maria; Prasek, Jan; Gispert-Guirado, Francesc; Llobet, Eduard; Mozalev, Alexander (2023). The planar anodic Al2O3-ZrO2 nanocomposite capacitor dielectrics for advanced passive device integration. Science And Technology Of Advanced Materials, 24(1), 2162324-. DOI: 10.1080/14686996.2022.2162324
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2023
Tipo de publicación: Journal Publications
Repositori URV