High-performance UV photodetector based on nickel oxide loaded with low amount of nitrogen and boron co-doped reduced graphene oxide for bias-switchable photoconductance

Identificador:  imarina:9335026

Handle: https://hdl.handle.net/20.500.11797/imarina9335026

Autores:  Walleni C; Hamdaoui N; Malik SB; Nsib MF; Llobet E

Resumen:
In this work, we report a low cost and straightforward chemical synthesis of nickel oxide nanoparticles decorated with low amount of nitrogen and boron co-doped reduced GO for a high-performance UV photodetector. For the first time, NiO/NB-rGO nanomaterial was synthesized following the co-precipitation method and subsequently annealed at 400 °C. The nanomaterial was characterized with several techniques such as SEM, TEM, XRD, and Raman spectroscopy. In addition, the device was subjected to electrical characterizations to determine their responsivity, detectivity, and temporal responses both in the absence of illumination (dark conditions) and under UV illumination of 375 nm. In particular, the studied I-V curve was performed to evaluate the coexistence of positive and negative photoconductivity in our device. The results revealed a better photoresponse of NiO/NB-rGO device to UV light, which showed high responsivity (800 A/W), large detectivity (9.4 ×1011 Jones), and fast rise/fall time (1.38/2.17 s) at reverse bias. Consequently, the Schottky contact of NiO/NB-rGO allowed to switch between carriers’ conduction, which displayed both positive and negative photoconductance at reverse and forward bias.