Repositori URV

Identificador: TDX:1190

Handle: https://hdl.handle.net/20.500.11797/TDX1190

Autors:
Castro Carranza, Alejandra

Resum:
We developed a new charge and capacitance analytical compact model for organic field effect transistors (OFETs) which we have called UBCM. The model is continuous and valid in all device operation regimes, i.e. accumulation, partial depletion and total depletion. It operates at low and medium frequencies since a quasi-static operation is assumed. The parameters applied in UBCM are analytically extracted from the current-voltage (I-V) characteristics of the OFETs using the unified model and extraction method (UMEM), thus the capacitance model is consistent with the I-V one. The overlap capacitance effect is taken into account and the frequency dependence is considered empirically by means of the insulator permittivity. Comparisons between modeled and experimental gate-to-channel capacitances of OTFTs based on different materials show the validity of the model. Finally, UBCM was implemented in circuit simulators by means of its Verilog-A and Spice codes to simulate organic inverters.