Identificador: TDX:254
Autors: Sotter Solano, Edgar Alexander
Resum:
Control of oxygen levels is a critical step in many industrial processes. In some of these processes, levels of oxygen must be detected and controlled even in ppm range.<br/>Although there are several probed methods for oxygen detection in these control systems, most of them are expensive and complex. More accessible methods as Lambda sensors or electrochemical cells present also problems: first ones need high concentration of oxygen, or an extremely accurate temperature control, to work without interference from other gases.<br/>Second ones may be affected by prolonged exposure to 'acid' gases such as carbon dioxide and it is not recommended for continuous use in atmospheres which contain more than 25% of CO2.<br/>Due to many advantages as low cost, small size and robustness, semiconductor sensors appear as a good solution for oxygen detection. Some authors had reported detection of oxygen at ppm levels employing this kind of sensors. However, most of them were made through thin film technology. For industrial applications, the most usual technology is thick film, because it is easier to fabricate and to dope than thin film sensors. For thick film sensors, detection of traces of oxygen is still a very difficult goal to reach and usually high temperatures (>700 ºC) are needed.<br/>The basic oxygen sensitivity mechanism of oxygen sensors based on semiconductor oxides is their strong dependencies of electrical conductivity on oxygen partial pressures.<br/>Titanium dioxide is the semiconductor material most widely used for oxygen detection.<br/>Titania (usually rutile crystalline phase) based sensors need to work at high temperatures (700 ºC - 1000 ºC), since oxygen detection in rutile state is mainly due to diffusion of oxygen ions in the bulk of the material. For bulk reaction it is necessary to work at these high temperatures, leading to high power consumption, which is not desirable for electronic applications.<br/>On the other hand, anatase state Titania has more free electrons. So, oxygen detection can be associated to surface reactions, which take place at not so high temperatures (400 ºC - 500 ºC). Then, it can be derived that maintaining an anatase structure would allow the detection of oxygen at medium temperatures, which is desirable for sensor design.<br/>It had been reported that when Titania is doped with pentavalent impurity ions, i.e. Nb5+, such ions get into the anatase Titania crystalline structure, giving rise to a hindering in the phase transformation to rutile and an inhibition in grain growth. It has been also reported that Nb-doped Titania shows higher sensitivity towards oxygen than pure TiO2. The doped material also shows lower impedance at low operating temperatures and hence, it is easier to design associated electronic circuitry.<br/>In this work pure Titania and Niobium doped Titania nanopowders were synthesized by a simplified sol-gel route. Based on the literature, the doping concentration in doped materials was set to Nb/Ti = 3 at%. In order to set the crystalline structure of the active materials, they were calcined at four different temperatures: 600 ºC, 700 ºC, 800 ºC and 900 ºC.<br/>The obtained materials were characterized by different techniques. The objective of these characterizations was to obtain information about the material structure that could be related to its detection properties. Inductively Coupled Plasma (ICP) spectroscopy was employed to determine the chemical composition of the samples and quantify the amount of each component. X-ray Diffraction (XRD) was used to establish the phases present in the crystalline structure of the material and to determine the size of the crystallites in each material. Area BET measurements were done to nanopowders to know the surface area and the porosity of each material. Scanning Electron Microscopy (SEM) was used to obtain details on the film structure and the grain size. To make quantitative and qualitative analysis, Energy-Dispersive X-ray Spectroscopy (EDS) was also applied.<br/>For the measurements, an alumina substrate was developed to be used in the oxygen sensor. This substrate can support four active layers working at the same temperature forming a sensor array. However, due some problems related with the substrate package at working temperatures above 450 ºC, the use of this substrate for oxygen sensor application was delayed and the results obtained whit it were not complete enough to be presented in this work. In order to resolve the necessity of a substrate that can resist high working temperatures for oxygen sensing applications, it was introduced a new substrate acquired from the Kurchatov Institute (Moscow-Russia). The results exposed in this work were obtained by using this last substrate.<br/>Using these substrates, the sensing capabilities of the materials were also tested. The sensitivity toward oxygen was measured under three different conditions: 20 ppm of O2 in N2 balance, 30 ppm and 15 pmm of O2 in CO2 balance. The sensors responses toward other pollutant gases (SO2, CH4, H2S and C2H4) were also tested in order to see the influence of such gases in the oxygen detection process.<br/>The best response toward oxygen was achieved in those sensors based on Nb-doped materials calcined at 700 ºC. This may be attributed to the niobium ions which hinder the grain growth and hence give rise to a high surface area that benefits the detection mechanism. The good response may be also attributed to the crystalline phase, mostly anatase, which allows the detection at desire temperatures (300 ºC - 600 ºC).<br/>On the other hand, the doped materials calcined at 600 ºC had a poor response, in spite of they have better physical characteristics than doped materials calcined at 700 ºC.<br/>This problem was mainly related to some carbon deposits detected in these materials trough Raman analyses. Such carbon deposits may be residual of the synthesis process, which could not be eliminated during the calcination. Since these carbon structures cover a great part of the material surface, and they are also poorly catalytic, the result is a deactivation of the catalysis.<br/>Concerning to the measurements carried out under CO2 atmosphere, Nb-doped Titania calcined at 700 ºC also responded to oxygen. However, the response toward 15 ppm of oxygen presented an inversion from oxidative type to reductive type. At low oxygen concentrations, the CO- ions from CO2 disassociation are adsorbed on the active material surface. The oxygen, instead deplexing, interacts with these ions forming CO2, liberating electrons to the active layer giving rise to a reductive type response. On the other hand, the responses toward other pollutant gases such H2S, SO2, C2H4 and CH4 were of reduction type, as they were expected, which support the idea that the change in the response type is not due to the change in the physics of the semiconductor oxide from n type to p type, but to a change in the reaction nature.<br/>In order to improve the sensing capabilities of doped materials, it was attempted to increase their surface area and porosity by using a surfactant as a template during the synthesis process. The surfactant employed was dodecylamine, which forms a micellar structure that works as template in the nucleation process of the oxide, generating small grains with higher surface area and porosity. Among three different attempts, the best results were obtained when 8 ml of surfactant were added to the sol-gel solution just after the hydrolysis of the metal alkoxides. XRD analyses of this material showed that the addition of surfactant retards even more the phase transition from anatase to rutile and also hinder the crystallites growth. These results were supported by SEM micrographs and BET analysis, which show a hinder in grain growth and an increase of the surface area. Area BET also evidences an increment of the material porosity. However, the results of the oxygen measurement reveal a poor response of the considered material. The Raman spectroscopy of this oxide shows some peaks that correspond to carbon with different morphologies. As it was explained before, these deposits of carbon retard the response of this material toward oxygen.
Repositori URV