Analytical Modeling of Ultrashort-Channel MOS Transistors

Identificador:  TDX:3835

Handle: https://hdl.handle.net/20.500.11797/TDX3835

Autores:  Yilmaz, Kerim

Resumen:
Today's transistor geometries are in the single-digit nanometer range. Consequently, device functionalities are negatively affected by short-channel and quantum mechanical effects (SCEs & QMEs). A transition from fin field-effect transistor (FinFET) geometry to gate-all-around (GAA) FETs such as cylindrical nanowire (NW) and silicon nanosheet (SiNS) FETs is envisioned in the upcoming technology nodes to suppress SCEs and ensure further MOSFET miniaturization. This dissertation focuses on the analytical modeling of ultrashort-channel NW and SiNS FETs. An equivalent double-gate (DG) dimensions concept is introduced to transfer an analytical DG potential model to NW FETs. A compact DG current model is modified by exploiting the rotational symmetry of NW FETs. The effect of quantum confinement (QC) is implemented by considering the additional bandgap widening in the calculation of an effective intrinsic charge carrier concentration and in the calculation of the threshold voltage. The effect of direct source-to-drain tunneling (DSDT) current in ultrascaled SiNS FETs is modeled with the new wavelet approach. This model calculates the tunneling probability analytically for each electron energy by approximating the potential barrier shape by a rectangular barrier with an equivalent barrier height. Due to the nonanalytically integrable Tsu-Esaki tunneling formula an analytical approach named quasi-compact model (QCM) is presented. This approach requires, among other approximations, a Newton iteration, and a linear interpolation of the tunneling current density. Furthermore, a cryogenic temperature and doping analysis is performed. The strong influence of the distance of the source related Fermi level from the conduction band edge on the subthreshold swing, current, and drain-induced barrier lowering (DIBL) saturation is investigated. Also, the merging of two subthreshold swing and DIBL effects is demonstrated and explained. The validity of the equivalent DG dimensions concept is proven by measurement and TCAD Sentaurus simulation data, while the wavelet approach is verified by NanoMOS NEGF simulations.