Wafer-scale few-layer graphene growth on Cu/Ni films for gas sensing applications

Identificador:  imarina:6012743

Handle: https://hdl.handle.net/20.500.11797/imarina6012743

Autors:  Deokar, Geetanjali; Casanova-Chafer, Juan; Rajput, Nitul S; Aubry, Cyril; Llobet, Eduard; Jouiad, Mustapha; Costa, Pedro M F J

Resum:
Pristine, few-layer graphene (FLG)/Si nanopillar assemblies are introduced as gas sensitive chemiresistors showing unprecedented sensitivity towards NO2 when operated at room temperature (25 degrees C) and in humid air. To achieve this, we first developed wafer-scale (similar to 50 cm(2)) FLG growth using sub-micrometer thick films of thermally evaporated Cu/Ni on a SiO2/Si substrate. The Ni film was deposited and annealed to induce the formation of a Cu-rich binary alloy. This alloy formation limited the inter-diffusion of Cu and SiO2, a phenomenon known to take place during the CVD growth of graphene on Cu/SiO2/Si. The as-grown high structural quality FLG was transferred, using a conventional wet chemical method, to lithographically patterned arrays of Si nanopillars (non-flat substrate). Testing of the FLG/Si assembly revealed a NO2 sensitivity that outperforms what is reported in the literature for pristine graphene. Overall, our growth and device fabrication work-flow demonstrate a way to design graphene-based gas sensing systems without incurring inconvenient processing steps such as metal foil etching, surface functionalization or particle loading.