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EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS In-Ga-Zn-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE

  • Dades identificatives

    Identificador: imarina:6015417
    Handle: https://hdl.handle.net/20.500.11797/imarina6015417
    Autors:
    Estrada, MagaliHernandez-Barrios, YoanlysMoldovan, OanaCerdeira, AntonioLime, FrancoisPavanello, MarceloIniguez, Benjamin
    Resum:
    Amorphous In-Ga-Zn-O Thin Film Transistors (a-IGZO TFTs) have proven to be an excellent approach for flat panel display drivers using organic light emitting diodes, due to their high mobility and stability compared to other types of TFTs. These characteristics are related to the specifics of the metal-oxygen-metal bonds, which give raise to spatially distributed s orbitals that can overlap between them. The magnitude of the overlap between s orbitals seems to be little sensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. In this paper, we show the effect of the distribution of states in the a-IGZO layer on the main conduction mechanism of the a-IGZO TFTs, analyzing the behavior with temperature of the drain current.

  • Altres:

    Autor segons l'article: Estrada, Magali; Hernandez-Barrios, Yoanlys; Moldovan, Oana; Cerdeira, Antonio; Lime, Francois; Pavanello, Marcelo; Iniguez, Benjamin;
    Departament: Enginyeria Electrònica, Elèctrica i Automàtica
    Autor/s de la URV: Iñiguez Nicolau, Benjamin
    Paraules clau: Thin-film transistor Oxide semiconductor Model Distribution of states Crystalline Behavior with temperature Amorphous oxide semiconductor
    Resum: Amorphous In-Ga-Zn-O Thin Film Transistors (a-IGZO TFTs) have proven to be an excellent approach for flat panel display drivers using organic light emitting diodes, due to their high mobility and stability compared to other types of TFTs. These characteristics are related to the specifics of the metal-oxygen-metal bonds, which give raise to spatially distributed s orbitals that can overlap between them. The magnitude of the overlap between s orbitals seems to be little sensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. In this paper, we show the effect of the distribution of states in the a-IGZO layer on the main conduction mechanism of the a-IGZO TFTs, analyzing the behavior with temperature of the drain current.
    Àrees temàtiques: Engineering, electrical & electronic Ciencias sociales
    Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
    Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
    Identificador de l'autor: 0000-0002-6504-7980
    Data d'alta del registre: 2023-04-15
    Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
    Referència a l'article segons font original: Facta Universitatis (Nis), Series: Electronics And Energetics. 31 (1): 1-9
    Referència de l'ítem segons les normes APA: Estrada, Magali; Hernandez-Barrios, Yoanlys; Moldovan, Oana; Cerdeira, Antonio; Lime, Francois; Pavanello, Marcelo; Iniguez, Benjamin; (2018). EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS In-Ga-Zn-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE. Facta Universitatis (Nis), Series: Electronics And Energetics, 31(1), 1-9. DOI: 10.2298/FUEE1801001E
    URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
    Entitat: Universitat Rovira i Virgili
    Any de publicació de la revista: 2018
    Tipus de publicació: Journal Publications

  • Paraules clau:

    Engineering, Electrical & Electronic
    Thin-film transistor
    Oxide semiconductor
    Model
    Distribution of states
    Crystalline
    Behavior with temperature
    Amorphous oxide semiconductor
    Engineering, electrical & electronic
    Ciencias sociales

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