Articles producció científica> Enginyeria Electrònica, Elèctrica i Automàtica

EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS In-Ga-Zn-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE

  • Identification data

    Identifier: imarina:6015417
    Handle: https://hdl.handle.net/20.500.11797/imarina6015417
    Authors:
    Estrada, MagaliHernandez-Barrios, YoanlysMoldovan, OanaCerdeira, AntonioLime, FrancoisPavanello, MarceloIniguez, Benjamin
    Abstract:
    Amorphous In-Ga-Zn-O Thin Film Transistors (a-IGZO TFTs) have proven to be an excellent approach for flat panel display drivers using organic light emitting diodes, due to their high mobility and stability compared to other types of TFTs. These characteristics are related to the specifics of the metal-oxygen-metal bonds, which give raise to spatially distributed s orbitals that can overlap between them. The magnitude of the overlap between s orbitals seems to be little sensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. In this paper, we show the effect of the distribution of states in the a-IGZO layer on the main conduction mechanism of the a-IGZO TFTs, analyzing the behavior with temperature of the drain current.

  • Others:

    Author, as appears in the article.: Estrada, Magali; Hernandez-Barrios, Yoanlys; Moldovan, Oana; Cerdeira, Antonio; Lime, Francois; Pavanello, Marcelo; Iniguez, Benjamin;
    Department: Enginyeria Electrònica, Elèctrica i Automàtica
    URV's Author/s: Iñiguez Nicolau, Benjamin
    Keywords: Thin-film transistor Oxide semiconductor Model Distribution of states Crystalline Behavior with temperature Amorphous oxide semiconductor
    Abstract: Amorphous In-Ga-Zn-O Thin Film Transistors (a-IGZO TFTs) have proven to be an excellent approach for flat panel display drivers using organic light emitting diodes, due to their high mobility and stability compared to other types of TFTs. These characteristics are related to the specifics of the metal-oxygen-metal bonds, which give raise to spatially distributed s orbitals that can overlap between them. The magnitude of the overlap between s orbitals seems to be little sensitive to the presence of the distorted bonds, allowing high values of mobility, even in devices fabricated at room temperature. In this paper, we show the effect of the distribution of states in the a-IGZO layer on the main conduction mechanism of the a-IGZO TFTs, analyzing the behavior with temperature of the drain current.
    Thematic Areas: Engineering, electrical & electronic Ciencias sociales
    licence for use: https://creativecommons.org/licenses/by/3.0/es/
    Author's mail: benjamin.iniguez@urv.cat
    Author identifier: 0000-0002-6504-7980
    Record's date: 2023-04-15
    Papper version: info:eu-repo/semantics/publishedVersion
    Link to the original source: http://www.doiserbia.nb.rs/Article.aspx?ID=0353-36701801001E
    Papper original source: Facta Universitatis (Nis), Series: Electronics And Energetics. 31 (1): 1-9
    APA: Estrada, Magali; Hernandez-Barrios, Yoanlys; Moldovan, Oana; Cerdeira, Antonio; Lime, Francois; Pavanello, Marcelo; Iniguez, Benjamin; (2018). EFFECT OF THE DISTRIBUTION OF STATES IN AMORPHOUS In-Ga-Zn-O LAYERS ON THE CONDUCTION MECHANISM OF THIN FILM TRANSISTORS ON ITS BASE. Facta Universitatis (Nis), Series: Electronics And Energetics, 31(1), 1-9. DOI: 10.2298/FUEE1801001E
    Licence document URL: https://repositori.urv.cat/ca/proteccio-de-dades/
    Article's DOI: 10.2298/FUEE1801001E
    Entity: Universitat Rovira i Virgili
    Journal publication year: 2018
    Publication Type: Journal Publications

  • Keywords:

    Engineering, Electrical & Electronic
    Thin-film transistor
    Oxide semiconductor
    Model
    Distribution of states
    Crystalline
    Behavior with temperature
    Amorphous oxide semiconductor
    Engineering, electrical & electronic
    Ciencias sociales

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