Autor segons l'article: Gonzalez, Benito; Rodriguez, Raul; Lazaro, Antonio;
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Lázaro Guillén, Antonio Ramon
Paraules clau: Thermal resistance Substrate temperature Silicon-on-insulator (soi) metal-oxide-semiconductor field-effect transistor (mosfet) Multifinger model Model Methodology Heat-transport Finfets Electrothermal characterization Devices
Resum: Thermal conductance in multifinger silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 degrees C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators.
Àrees temàtiques: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
ISSN: 00189383
Adreça de correu electrònic de l'autor: antonioramon.lazaro@urv.cat
Identificador de l'autor: 0000-0003-3160-5777
Data d'alta del registre: 2024-09-07
Versió de l'article dipositat: info:eu-repo/semantics/acceptedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/8419075
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Transactions On Electron Devices. 65 (9): 3626-3632
Referència de l'ítem segons les normes APA: Gonzalez, Benito; Rodriguez, Raul; Lazaro, Antonio; (2018). Thermal Resistance Characterization for Multifinger SOI-MOSFETs. Ieee Transactions On Electron Devices, 65(9), 3626-3632. DOI: 10.1109/TED.2018.2853799
DOI de l'article: 10.1109/TED.2018.2853799
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2018
Tipus de publicació: Journal Publications
Repositori URV