Autor segons l'article: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander;
Departament: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/s de la URV: Iñiguez Nicolau, Benjamin
Paraules clau: Voltage Thin films Thin film transistors Thin film circuits Source barrier Source and drains Short channel Semiconductor device models Schwarz-christoffel transformations Schottky barriers Schottky barrier diodes Schottky barrier Organic thin-film transistor (tft) Organic thin film transistors Nonlinear contact effects Field effect transistors Electric fields Drain current Device architectures Current voltage characteristics Contact resistance Contact effects Compact modeling Barrier lowering
Resum: We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly considers the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 to 10.5 mu m.
Àrees temàtiques: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: benjamin.iniguez@urv.cat
Identificador de l'autor: 0000-0002-6504-7980
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/submittedVersion
Enllaç font original: https://ieeexplore.ieee.org/document/9462804
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Ieee Transactions On Electron Devices. 68 (8): 3843-3850
Referència de l'ítem segons les normes APA: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Al (2021). Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors. Ieee Transactions On Electron Devices, 68(8), 3843-3850. DOI: 10.1109/TED.2021.3088770
DOI de l'article: 10.1109/TED.2021.3088770
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2021
Tipus de publicació: Journal Publications
Repositori URV