Autor según el artículo: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Alexander;
Departamento: Enginyeria Electrònica, Elèctrica i Automàtica
Autor/es de la URV: Iñiguez Nicolau, Benjamin
Palabras clave: Voltage Thin films Thin film transistors Thin film circuits Source barrier Source and drains Short channel Semiconductor device models Schwarz-christoffel transformations Schottky barriers Schottky barrier diodes Schottky barrier Organic thin-film transistor (tft) Organic thin film transistors Nonlinear contact effects Field effect transistors Electric fields Drain current Device architectures Current voltage characteristics Contact resistance Contact effects Compact modeling Barrier lowering
Resumen: We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly considers the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 to 10.5 mu m.
Áreas temáticas: Physics, applied Materiais Interdisciplinar Engineering, electrical & electronic Engenharias iv Engenharias ii Electronic, optical and magnetic materials Electrical and electronic engineering Ciência da computação Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: benjamin.iniguez@urv.cat
Identificador del autor: 0000-0002-6504-7980
Fecha de alta del registro: 2024-07-27
Versión del articulo depositado: info:eu-repo/semantics/submittedVersion
Enlace a la fuente original: https://ieeexplore.ieee.org/document/9462804
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Ieee Transactions On Electron Devices. 68 (8): 3843-3850
Referencia de l'ítem segons les normes APA: Pruefer, Jakob; Leise, Jakob; Nikolaou, Aristeidis; Borchert, James W.; Darbandy, Ghader; Klauk, Hagen; Iniguez, Benjamin; Gneiting, Thomas; Kloes, Al (2021). Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors. Ieee Transactions On Electron Devices, 68(8), 3843-3850. DOI: 10.1109/TED.2021.3088770
DOI del artículo: 10.1109/TED.2021.3088770
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2021
Tipo de publicación: Journal Publications
Repositori URV