Autor segons l'article: Mena, Josue; Carvajal, Joan J.; Zubialevich, Vitaly; Parbrook, Peter J.; Diaz, Francesc; Aguilo, Magdalena;
Departament: Química Física i Inorgànica
Autor/s de la URV: Aguiló Díaz, Magdalena / Carvajal Martí, Joan Josep / Díaz González, Francisco Manuel
Paraules clau: Surface porosity Single-step Property Porous gan Porosity Pore diameters Iii-v semiconductors Hydrophobicity Gan epitaxial layers Gallium nitride Epitaxial growth Direct reactions Diodes Deposition time Degree of porosity Contact angle Chemical vapour deposition Chemical vapor deposition Ammonia Algan/gan hemt Afm
Resum: Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. Furthermore, the evolution of the contact angle of a droplet of water located on the surface of these GaN epitaxial layers with the deposition time was investigated. We observe a transition from the hydrophilic regime to the hydrophobic regime for deposition times longer than 15 min. The observed dependence of GaN hydrophobicity on its degree of porosity is discussed and explained in the framework of the Cassie-Baxter model.
Àrees temàtiques: Surfaces and interfaces Spectroscopy Química Medicine (miscellaneous) Medicina ii Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais Interdisciplinar General medicine General materials science Farmacia Engenharias iv Engenharias iii Engenharias ii Electrochemistry Condensed matter physics Ciências biológicas iii Ciências biológicas ii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência de alimentos Ciência da computação Chemistry, physical Chemistry, multidisciplinary Biotecnología Biodiversidade Astronomia / física
Accès a la llicència d'ús: https://creativecommons.org/licenses/by/3.0/es/
Adreça de correu electrònic de l'autor: f.diaz@urv.cat joanjosep.carvajal@urv.cat magdalena.aguilo@urv.cat
Identificador de l'autor: 0000-0003-4581-4967 0000-0002-4389-7298 0000-0001-6130-9579
Data d'alta del registre: 2024-07-27
Versió de l'article dipositat: info:eu-repo/semantics/publishedVersion
Enllaç font original: https://pubs.acs.org/doi/10.1021/acs.langmuir.1c02316
URL Document de llicència: https://repositori.urv.cat/ca/proteccio-de-dades/
Referència a l'article segons font original: Langmuir. 37 (50): 14622-14627
Referència de l'ítem segons les normes APA: Mena, Josue; Carvajal, Joan J.; Zubialevich, Vitaly; Parbrook, Peter J.; Diaz, Francesc; Aguilo, Magdalena; (2021). Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition. Langmuir, 37(50), 14622-14627. DOI: 10.1021/acs.langmuir.1c02316
DOI de l'article: 10.1021/acs.langmuir.1c02316
Entitat: Universitat Rovira i Virgili
Any de publicació de la revista: 2021
Tipus de publicació: Journal Publications
Repositori URV