Autor según el artículo: Mena, Josue; Carvajal, Joan J.; Zubialevich, Vitaly; Parbrook, Peter J.; Diaz, Francesc; Aguilo, Magdalena;
Departamento: Química Física i Inorgànica
Autor/es de la URV: Aguiló Díaz, Magdalena / Carvajal Martí, Joan Josep / Díaz González, Francisco Manuel
Palabras clave: Surface porosity Single-step Property Porous gan Porosity Pore diameters Iii-v semiconductors Hydrophobicity Gan epitaxial layers Gallium nitride Epitaxial growth Direct reactions Diodes Deposition time Degree of porosity Contact angle Chemical vapour deposition Chemical vapor deposition Ammonia Algan/gan hemt Afm
Resumen: Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. Furthermore, the evolution of the contact angle of a droplet of water located on the surface of these GaN epitaxial layers with the deposition time was investigated. We observe a transition from the hydrophilic regime to the hydrophobic regime for deposition times longer than 15 min. The observed dependence of GaN hydrophobicity on its degree of porosity is discussed and explained in the framework of the Cassie-Baxter model.
Áreas temáticas: Surfaces and interfaces Spectroscopy Química Medicine (miscellaneous) Medicina ii Materials science, multidisciplinary Materials science (miscellaneous) Materials science (all) Materiais Interdisciplinar General medicine General materials science Farmacia Engenharias iv Engenharias iii Engenharias ii Electrochemistry Condensed matter physics Ciências biológicas iii Ciências biológicas ii Ciências biológicas i Ciências ambientais Ciências agrárias i Ciência de alimentos Ciência da computação Chemistry, physical Chemistry, multidisciplinary Biotecnología Biodiversidade Astronomia / física
Acceso a la licencia de uso: https://creativecommons.org/licenses/by/3.0/es/
Direcció de correo del autor: f.diaz@urv.cat joanjosep.carvajal@urv.cat magdalena.aguilo@urv.cat
Identificador del autor: 0000-0003-4581-4967 0000-0002-4389-7298 0000-0001-6130-9579
Fecha de alta del registro: 2024-07-27
Versión del articulo depositado: info:eu-repo/semantics/publishedVersion
Enlace a la fuente original: https://pubs.acs.org/doi/10.1021/acs.langmuir.1c02316
URL Documento de licencia: https://repositori.urv.cat/ca/proteccio-de-dades/
Referencia al articulo segun fuente origial: Langmuir. 37 (50): 14622-14627
Referencia de l'ítem segons les normes APA: Mena, Josue; Carvajal, Joan J.; Zubialevich, Vitaly; Parbrook, Peter J.; Diaz, Francesc; Aguilo, Magdalena; (2021). Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition. Langmuir, 37(50), 14622-14627. DOI: 10.1021/acs.langmuir.1c02316
DOI del artículo: 10.1021/acs.langmuir.1c02316
Entidad: Universitat Rovira i Virgili
Año de publicación de la revista: 2021
Tipo de publicación: Journal Publications
Repositori URV